Publicaciones

• Communication dans un congrès

Initiation à la microfluidique par la simulation, la réalisation et la caractérisation de microsystèmes

Simon Laurette, Renaud Dufour, Thomas Dargent, Maxime Harnois, Nour Eddine Bourzgui, Vincent Thomy

12es Journées Pédagogiques CNFM, 2012, Saint Malo, France. pp.1-6. ⟨hal-00806632⟩

• Communication dans un congrès

High transconductance on AlGaN/GaN HEMT on (110) silicon substrate

J.C. Gerbedoen, A. Soltani, Y. Cordier, Jean-Claude de Jaeger

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.413-416. ⟨hal-00814978⟩

• Communication dans un congrès

Cryogenic operation of InAs/AlSb HEMT hybrid LNAs

G. Moschetti, N. Wadefalk, P.A. Nilsson, M. Abbasi, L. Desplanque, X. Wallart, J. Grahn

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.373-376. ⟨hal-00814973⟩

• Article dans une revue

Power harvesting capabilities of SHM ultrasonic sensors

Christophe Delebarre, Thomas Sainthuile, Sébastien Grondel, Christophe Paget

The aim of this work is to show that classical Structural Health Monitoring ultrasonic sensors may provide some power harvesting capabilities from a wide variety of vibration sources. In other words, the authors developed an integrated piezoelectric energy harvesting sensor capable of operating a...

Smart Materials Research, 2012, 2012, pp.387638. ⟨10.1155/2012/387638⟩. ⟨hal-00790375⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we...

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

• Article dans une revue

Vertical III-V V-shaped nano-membranes epitaxially grown on a patterned Si[001] substrate and their enhanced light scattering

S. Conesa-Boj, E. Russo-Averchi, A. Dalmau-Mallorqui, J. Trevino, E.F. Pecora, C. Forestiere, A. Handin, M. Ek, L. Zweifel, L.R. Wallenberg, D. Rüffer, M. Heiss, David Troadec, L. Dal Negro, P. Caroff, A. Fontcuberta I Morral

ACS Nano, 2012, 6, pp.10982-10991. ⟨10.1021/nn304526k⟩. ⟨hal-00788197⟩

• Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

• Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the...

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩