Publicaciones

• Communication dans un congrès

Effect of phonon confinement on the dispersion relation and heat capacity in nanoscale Si membranes

J. Cuffe, E. Chávez, A. Shchepetov, P.O. Chapuis, E.H. El Boudouti, F. Alzina, Yan Pennec, Bahram Djafari-Rouhani, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The effect of confinement on the acoustic phonon dispersion relation and heat capacity in free-standing silicon membranes is investigated, with thickness values down ∼ 8 nm. The discrete phonon branches are observed by angle-resolved inelastic light scattering spectroscopy. The fundamental flexural...

ASME 2012 International Mechanical Engineering Congress and Exposition, Symposium on Phononic Crystals and Acoustic Metamaterials, Nov 2012, Houston, United States. pp.1081-1088, ⟨10.1115/IMECE2012-87635⟩. ⟨hal-00911369⟩

• Article dans une revue

Physical aspects of low power synapses based on phase change memory devices

M. Suri, O. Bichler, D. Querlioz, B. Traore, O. Cueto, L. Perniola, V. Sousa, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we demonstrate how phase change memory (PCM) devices can be used to emulate biologically inspired synaptic functions in particular, potentiation and depression, important for implementing neuromorphic hardware. PCM devices with different chalcogenide materials are fabricated and...

Journal of Applied Physics, 2012, 112 (5), pp.054904. ⟨10.1063/1.4749411⟩. ⟨hal-00787372⟩

• Article dans une revue

Band gap tunability of magneto-elastic phononic crystal

Olivier Bou Matar, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier, Philippe Pernod, Vladimir Preobrazhensky

The possibility of control and tuning of the band structures of phononic crystals offered by the introduction of an active magnetoelastic material and the application of an external magnetic field is studied. Two means to obtain large elastic properties variations in magnetoelastic material are...

Journal of Applied Physics, 2012, 111 (5), pp.054901. ⟨10.1063/1.3687928⟩. ⟨hal-00787018⟩

• Article dans une revue

Switching properties of nano-scale multi-axial ferroelectrics : geometry and interface effects

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

We consider the nonuniform polarization switching in the electroded nanoscale cubic ferroelectric, having the nano-size cylindric shape. Assuming the weak anisotropy, that can be realized e.g. in Lead Zirconate Titanate close to morphotropic point, we show that vortex-like polarization texture can...

Integrated Ferroelectrics, 2012, 133, pp.96-102. ⟨10.1080/10584587.2012.663617⟩. ⟨hal-00788227⟩

• Communication dans un congrès

Synthesis and characterization of vertically oriented ZnO nanowires grown on c-axis ZnO seed layer by pulsed laser deposition

Basma El Zein, Y. Yao, S. Boulfrad, El Hadj Dogheche, Didier Decoster, G.E. Jabbour

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium Y : Advanced materials and characterization techniques for solar cells, 2012, Strasbourg, France. ⟨hal-00797741⟩

• Communication dans un congrès

Micro- et nano-technologies pour biocapteurs à base de résonance plasmonique de surface

Jean-Pierre Vilcot, P.M. Danze, M. Bouazaoui, S. Habraken, V. Thomy, Sophie Maricot, C. Lenaerts, Rabah Boukherroub, P. Damman, A. Coilliot

4ème Réunion Annuelle de l'Institut Thématique Multi-Organismes Technologies pour la Santé, 2012, Lille, France. ⟨hal-00797737⟩

• Communication dans un congrès

Interference and digital communications (turbo codes, cooperation)

W. Gu, Laurent Clavier

Workshop on Mathematical Models for Impulsiveness : Alpha-Stable Processes for Signal Processing and Communications, 2012, Villeneuve d'Ascq, France. ⟨hal-00797335⟩

• Communication dans un congrès

Graphene growth and synthesis

D. Vignaud

European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, 2012, Amsterdam, Netherlands. ⟨hal-00797341⟩

• Article dans une revue

Enhanced backscattering for infrared detection using photonic crystal based flat lens

J. Oden, M. Hofman, X. Melique, D. Lippens, O. Vanbesien

Applied optics, 2012, 51, pp.5601-5608. ⟨10.1364/AO.51.005601⟩. ⟨hal-00786957⟩

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage...

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩