Publicaciones

• Communication dans un congrès

Dispositifs à base de graphène

H. Happy

Journée Nanoélectronique du club EEA, 2012, Orsay, France. ⟨hal-00797281⟩

• Communication dans un congrès

Tunability of one-dimensional piezoelectric or piezomagnetic phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham-Thi

IEEE International Ultrasonics Symposium, IUS 2012, 2012, Dresden, Germany. ⟨hal-00797275⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or...

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Intelligent transports systems based on UWB technologies

Fouzia Boukour, Atika Rivenq

Ultra Wide Band (UWB) may offer very efficient solutions for various communication and localisation transport applications. We propose to use this technique to establish communication vehicle- to- vehicle and vehicle- to-infrastructure. In fact, compared to traditional carrier-based, Ultra-Wide...

IEEE European Wireless Conference, Sep 2012, Poland. 5p. ⟨hal-01068408⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

Surface engineering by plasma : spectroscopic characterization of an N2-Ar discharge

A. Annusova, J. Kristof, C. Foissac, P. Supiot, P. Veis

14th Conference of Doctoral Students, ELITECH'12, 2012, Bratislava, Slovakia. ⟨hal-00798839⟩

• Communication dans un congrès

Superhydrophobicity and graphene oxide nanosheets to prevent biofouling in EWOD based lab-on-chip devices

G. Perry, F. Lapierre, Yannick Coffinier, V. Thomy, Rabah Boukherroub

Pacific Rim Meeting on Electrochemical and Solid-State Science, PRiME 2012, 2012, Honolulu, HI, United States. ⟨hal-00798838⟩

• Article dans une revue

Visual pattern extraction using energy-efficient ''2-PCM synapse'' neuromorphic architecture

M. Bichler, D. Suri, D. Querlioz, D. Vuillaume, B. de Salvo, C. Gamrat

IEEE Transactions on Electron Devices, 2012, 59, pp.2206-2214. ⟨10.1109/TED.2012.2197951⟩. ⟨hal-00787385⟩