Publicaciones

• Article dans une revue

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩

• Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

• Article dans une revue

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink

Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩

• Article dans une revue

Theoretical and experimental evidence of level repulsion states and evanescent modes in sonic crystal stubbed waveguides

V. Romero-Garcia, Jerome O. Vasseur, Lluis Miquel Garcia-Raffi, Anne-Christine Hladky

The complex band structures calculated using the Extended Plane Wave Expansion (EPWE) reveal the presence of evanescent modes in periodic systems, never predicted by the classical ω(~k) methods, providing novel interpretations of several phenomena as well as a complete picture of the system. In...

New Journal of Physics, 2012, 14, pp.023049-1-21. ⟨10.1088/1367-2630/14/2/023049⟩. ⟨hal-00786887⟩

• Article dans une revue

Description of the general outlines of the french project SENSO - Quality assessment and limits of different NDT methods

J.P. Balayssac, S. Laurens, Ginette Arliguie, D. Breysse, V. Garnier, X. Derobert, Bogdan Piwakowski

Construction and Building Materials, 2012, 35, pp.131-138. ⟨10.1016/j.conbuildmat.2012.03.003⟩. ⟨hal-00790359⟩

• Communication dans un congrès

Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩

• Communication dans un congrès

InAs hot electron transistors with cutoff frequency above 200 GHz

H. Nguyen Van, A. N. Baranov, R. Teissier, M. Zaknoune

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797314⟩

• Communication dans un congrès

Fabrication de composants passifs par impression jet d'encre - Caractérisation RF

W. Wei, Thomas Dargent, Virginie Hoel, H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797331⟩

• Communication dans un congrès

[Invited] Graphene material for RF devices on flexible substrate

H. Happy

European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, 2012, Amsterdam, Netherlands. ⟨hal-00797279⟩

• Chapitre d'ouvrage

Ga3+ focused ion beam for piezo electric nano structuration fabrication

Denis Remiens, D. Deresmes, David Troadec, J. Costecalde

Goorsky M. Ion implantation, InTech, chapter 13, 315-326, 2012, ISBN 978-953-51-0634-0. ⟨10.5772/34139⟩. ⟨hal-00798990⟩