Publicaciones

Affichage de 8471 à 8480 sur 16071


  • Article dans une revue

Influence of thermal and fast neutron irradiation on DC electrical performances of AlGaN/GaN transistors

F. Berthet, Y. Guhel, B. Boudart, H. Gualous, J.L. Trolet, M. Piccione, Christophe Gaquière

IEEE Transactions on Nuclear Science, 2012, 59, pp.2556-2561. ⟨10.1109/TNS.2012.2209894⟩. ⟨hal-00788175⟩

  • Article dans une revue

Robustness of high-resolution channel parameter estimators in presence of dense multipath components

E. Tanghe, D.P. Gaillot, W. Joseph, M. Lienard, Pierre Degauque, L. Martens

Electronics Letters, 2012, 48, pp.130-132. ⟨10.1049/el.2011.3454⟩. ⟨hal-00788224⟩

  • Article dans une revue

Monte Carlo study of self-heating in nanoscale devices

T. Sadi, R.W. Kelsall, N.J. Pilgrim, Jean-Luc Thobel, F. Dessenne

Journal of Computational Electronics, 2012, 11, pp.118-128. ⟨10.1007/s10825-012-0395-x⟩. ⟨hal-00788225⟩

  • Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode

X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang

Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩

  • Article dans une revue

Theoretical and experimental performances evaluation of a new multiple access technique for optical fibers

C. Tatkeu, D. Loum, Iyad Dayoub, M. Heddebaut, Jean-Michel Rouvaen

International Journal of Information Engineering, 2012, 2, pp.129-137. ⟨hal-00788186⟩

  • Article dans une revue

Experimental investigation on channel characteristics in tunnel environment for time reversal ultra wide band techniques

C. Garcia-Pardo, M. Lienard, Pierre Degauque, J.M. Molina-Garcia-Pardo, L. Juan-Llacer

Radio Science, 2012, 47, pp.RS1009-1-9. ⟨10.1029/2011RS004893⟩. ⟨hal-00788200⟩

  • Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

  • Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

  • Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we...

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

  • Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩