Publicaciones
Affichage de 8621 à 8630 sur 16447
Simple and low-cost fabrication of PDMS microfluidic round channels by surface-wetting parameters optimization
Magalie de Ville, Philippe Coquet, Philippe Brunet, Rabah Boukherroub
Microfluidics and Nanofluidics, 2012, 12, pp.953-961. ⟨10.1007/s10404-011-0929-8⟩. ⟨hal-00788300⟩
Microwave liquid sensing based on interferometry and microscopy techniques
Kamel Haddadi, H. Bakli, T. Lasri
IEEE Microwave and Wireless Components Letters, 2012, 22, pp.542-544. ⟨10.1109/LMWC.2012.2218230⟩. ⟨hal-00788274⟩
DC and high-frequency characteristics of GaN Schottky varactors for frequency multiplication
C. Jin, D. Pavlidis, L. Considine
IEICE Transactions on Electronics, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩. ⟨hal-00790415⟩
Modelling and simulation of high-frequency (100 MHz) ultrasonic linear arrays based on single crystal LiNbO3
Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, Y.P. Huang
Ultrasonics, 2012, 52, pp.47-53. ⟨10.1016/j.ultras.2011.06.009⟩. ⟨hal-00790365⟩
Electro-elastic moduli and frequency dependence of KN single crystal
R Rouffaud, F. Levassort, M. Pham-Thi, E. Leveugle, Anne-Christine Hladky
2012 Joint 21st IEEE ISAF / 11th IEEE ECAPD / IEEE PFM (ISAF/ECAPD/PFM), Jul 2012, Aveiro, Portugal. pp.1-4, ⟨10.1109/ISAF.2012.6297785⟩. ⟨hal-01705153⟩
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩
The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks
B. van Damme, K. van den Abeele, Olivier Bou Matar
Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩
In0.53Ga0.47As MOSFET with gate-first and gate-last process
J.J. Mo, Nicolas Wichmann, S. Bollaert
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩
Impurity-limited mobility and variability in gate-all-around silicon nanowires
Y.M. Niquet, H. Mera, C. Delerue
Applied Physics Letters, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩
100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies
J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩. ⟨hal-00801043⟩