Publicaciones

• Communication dans un congrès

Voltage controllable metamaterials infiltrated by liquid crystal

F. Zhang, Q. Zhao, J.B. Sun, Eric Lheurette, J. Zhou, D. Lippens

5th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials'2011, 2011, Barcelona, Spain. pp.331-333. ⟨hal-00799989⟩

• Article dans une revue

Complex permittivity determination with the transmission/reflection method

N. Jebbor, S. Bri, A. Nakheli, L. Bejjit, M. Haddad, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.682-695. ⟨hal-00783490⟩

• Article dans une revue

Application of the finite differences method (FDTD) for the modeling of SAR in biological tissues

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

Physical and Chemical News, 2011, 60, pp.31-40. ⟨hal-00783438⟩

• Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

• Communication dans un congrès

Interference modeling and relay selection issue for amplify-and-forward IR-UWB sensor networks

Jie Chen, Laurent Clavier, X. Yong, A. Burr, N. Rolland, P.A. Rolland

4th IFIP International Conference on New Technologies, Mobility and Security, NTMS 2011, 2011, France. pp.1-5, ⟨10.1109/NTMS.2011.5721051⟩. ⟨hal-00579047⟩

• Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge...

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩

• Article dans une revue

Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials

Jerome O. Vasseur, Olivier Bou Matar, J.F. Robillard, Anne-Christine Hladky, P.A. Deymier

AIP Advances, 2011, 1, pp.041904-1-12. ⟨10.1063/1.3676172⟩. ⟨hal-00783382⟩

• Article dans une revue

Statistical analysis of multipath clustering in an indoor office environment

Emmeric Tanghe, Wout Joseph, M. Lienard, Abdelmottaleb Nasr, Paul Christian Stefanut, Luc Martens, Pierre Degauque

A parametric directional-based MIMO channel model is presented which takes multipath clustering into account. The directional propagation path parameters include azimuth of arrival (AoA), azimuth of departure (AoD), delay, and power. MIMO measurements are carried out in an indoor office environment...

EURASIP Journal on Wireless Communications and Networking, 2011, 2011, pp.263134. ⟨10.1155/2011/263134⟩. ⟨hal-00591334⟩

• Communication dans un congrès

Une nouvelle approche écologique des CND par ressuage et magnétoscopie - Bilan des technologies de substitution envisageables

E. Crescenzo, A. Pelletier, H. Walaszek, S. Maillard, J.P. Chambard, S. Bittendiebel, F. Reverdy, F. Faese, Liévin Camus, Frédéric Jenot

Journées COFREND, Conférences et exposition sur les essais non destructifs, 2011, Dunkerque, France. pp.1-15. ⟨hal-00806710⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential...

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩