Publicaciones

• Article dans une revue

Enhancement of bonding strength of packaging based on BCB bonding for RF devices

S. Seok, M. Fryziel, N. Rolland, P.A. Rolland

Microsystem Technologies, 2012, 18, pp.2035-2039. ⟨10.1007/s00542-012-1530-0⟩. ⟨hal-00786909⟩

• Article dans une revue

MEMS ring resonators for laserless AFM with sub-nanoNewton force resolution

Emmanuelle Algre, Zhuang Xiong, Marc Faucher, Benjamin Walter, Lionel Buchaillot, Bernard Legrand

A concept of atomic force microscopy (AFM) oscillating sensors using electromechanical silicon microresonators is presented, and imaging capabilities are demonstrated. The microresonators are designed to feature MHz resonance frequencies, and they are batch fabricated using standard silicon...

Journal of Microelectromechanical Systems, 2012, 21, pp.385-397. ⟨10.1109/JMEMS.2011.2179012⟩. ⟨hal-00787407⟩

• Article dans une revue

Conduction degradation in anisotropic multi-cracked materials

S. Giordano, Pier Luca Palla

The European Physical Journal B: Condensed Matter and Complex Systems, 2012, 85, pp.59-1-15. ⟨10.1140/epjb/e2011-20814-5⟩. ⟨hal-00787354⟩

• Article dans une revue

Visual pattern extraction using energy-efficient ''2-PCM synapse'' neuromorphic architecture

M. Bichler, D. Suri, D. Querlioz, D. Vuillaume, B. de Salvo, C. Gamrat

IEEE Transactions on Electron Devices, 2012, 59, pp.2206-2214. ⟨10.1109/TED.2012.2197951⟩. ⟨hal-00787385⟩

• Article dans une revue

Enhanced transmission via a sub-wavelength hole aperture coupled to a high-permittivity resonator

Véronique Sadaune, L. Kang, D. Lippens

Journal of Physics D: Applied Physics, 2012, 45, pp.475102-1-6. ⟨10.1088/0022-3727/45/47/475102⟩. ⟨hal-00786959⟩

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage...

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• Article dans une revue

Enhanced backscattering for infrared detection using photonic crystal based flat lens

J. Oden, M. Hofman, X. Melique, D. Lippens, O. Vanbesien

Applied optics, 2012, 51, pp.5601-5608. ⟨10.1364/AO.51.005601⟩. ⟨hal-00786957⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩

• Article dans une revue

Electrical characterization of AlGaN/GaN HEMTs on Si substrate

H. Mosbahi, M. Gassoumi, H. Mejri, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Electron Devices, 2012, 15, pp.1225-1231. ⟨hal-00788172⟩

• Article dans une revue

Terahertz interferometer for integrated Goubau-line waveguides

Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

An integrated Terahertz {Mach-Zehnder} interferometer is presented in order to perform differential measurements in a chip. Both simulation and experiment are performed for validating the interferometer structure. Destructive interference peaks are observed, and destructive frequencies are...

Progress In Electromagnetics Research Letters, 2012, 30, pp.49-58. ⟨10.2528/PIERL11121205⟩. ⟨hal-00788303⟩