Publicaciones

• Communication dans un congrès

Fabrication and characterization of half-Kerfed LiNbO3-based high-frequency (>100MHz) ultrasonic array transducers

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, J. Zhou, Y.P. Huang

The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore,...

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.1727-1730, ⟨10.1109/ULTSYM.2011.0431⟩. ⟨hal-00800467⟩

• Communication dans un congrès

Dry etching process on a conducting interpenetrating polymer network actuator for a flapping fly micro robot

Alexandre Khaldi, Cedric Plesse, Caroline Soyer, Eric Cattan, F. Vidal, C. Chevrot, D. Teyssie

ASME 2011 International Mechanical Engineering Congress & Exposition, IMECE 2011, 2011, Denver, CO, United States. pp.IMECE2011-63505-1-3. ⟨hal-00800389⟩

• Communication dans un congrès

Kinetic study of enzyme-catalyzed reaction at microscale level

Adil Elagli, A. Treizebre, Simon Laurette, Dominique Vercaigne-Marko, Didier Guillochon, Pascal Dhulster, Bertrand Bocquet, Renato Froidevaux

6th International Conference on Microtechnologies in Medicine and Biology, MMB 2011, 2011, Lucerne, Switzerland. ⟨hal-00807654⟩

• Communication dans un congrès

Towards cost-effective millimeter wave high power GaN devices

F Medjdoub

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. ⟨hal-00807130⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Article dans une revue

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

S. Galambosi, L. Wirtz, J.A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hamalainen

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), pp.081413. ⟨10.1103/PhysRevB.83.081413⟩. ⟨hal-00579067⟩

• Article dans une revue

Band gap engineering in simultaneous phononic and photonic crystal slabs

Bahram Djafari-Rouhani, Yan Pennec, El Houssaine El Boudouti, Jerome O. Vasseur, Youssef El Hassouani, C. Li, Abdellatif Akjouj, Driss Bria

We discuss the simultaneous existence of phononic and photonic band gaps in two types of phononic crystals slabs, namely periodic arrays of nanoholes in a Si membrane and of Si nanodots on a SiO2 membrane. In the former geometry, we investigate in detail both the boron nitride lattice and the...

Applied physics. A, Materials science & processing, 2011, 103, pp.735-739. ⟨10.1007/s00339-010-6207-x⟩. ⟨hal-00603012⟩

• Article dans une revue

Vortex state in thin films of multicomponent ferroelectrics

Laurent Baudry, Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Lahoche

The distribution of polarization in thin film of multicomponent weak anisotropic ferroelectric under application of an axially symmetric electric field induced by circular electrodes is studied. We demonstrate that above a certain critical field the instability towards abrupt formation of...

Thin Solid Films, 2011, 519 (17), pp.5808-5810. ⟨10.1016/j.tsf.2010.12.192⟩. ⟨hal-00603009⟩

• Article dans une revue

Characterizing nanoscale electromechanical fatigue in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films by piezoresponse force microscopy

A. Gatoux, A. Ferri, M. Detalle, Denis Remiens, R. Desfeux

Thin Solid Films, 2011, 520, pp.591-594. ⟨10.1016/j.tsf.2011.07.032⟩. ⟨hal-00639937⟩

• Article dans une revue

Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

I. Iniguez-De-La-Torre, J. Mateos, Yannick Roelens, C. Gardes, S. Bollaert, T. Gonzalez

Nanotechnology, 2011, 22, pp.445203-1-5. ⟨10.1088/0957-4484/22/44/445203⟩. ⟨hal-00639808⟩