Publicaciones

• Communication dans un congrès

Bulk metamaterial under front illumination at terahertz frequencies

Jorge Carbonell, Shengxiang Wang, Eric Lheurette, Didier Lippens

9th Progress in Electromagnetics Research Symposium, PIERS 2011, Mar 2011, Marrakesh, Morocco. ⟨hal-00591386⟩

• Communication dans un congrès

Augmentation de la sensibilité de détection par métamatériaux terahertz

Nasser Soltani, Eric Lheurette, S.X. Wang, Frédéric Garet, Karine Blary, Jean-Louis Coutaz, Didier Lippens

Colloque National Métamatériaux, CNM 2011, Mar 2011, Orsay, France. ⟨hal-00807139⟩

• Communication dans un congrès

Controlling THz surface electromagnetic waves with metamaterials

Willie J. Padilla, Tahsin Akalin, Wenchen Chen

International Workshop on Optical Terahertz Science and Technology, OTST 2011, Mar 2011, Santa Barbara, CA, United States. ⟨hal-00807710⟩

• Communication dans un congrès

Gbit/s wireless transmission at 200 GHz carrier using optoelectronic THz technologies

Guillaume Ducournau, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, P. Szriftgiser, Denis Bacquet, Mohammed Zaknoune, Jean-Francois Lampin

International Workshop on Optical Terahertz Science and Technology, OTST 2011, Mar 2011, Santa Barbara, CA, United States. ⟨hal-00807701⟩

• Communication dans un congrès

Terahertz plasmonic filters, power dividers and applications to microscopy and communications

Tahsin Akalin, Wenchen Chen, Ibrahim Türer, Guillaume Ducournau, Jean-Francois Lampin, Willie J. Padilla

International Workshop on Optical Terahertz Science and Technology, OTST 2011, Mar 2011, Santa Barbara, CA, United States. ⟨hal-00807712⟩

• Brevet

Photodétecteur, photomélangeur et leur application à la génération de rayonnement terahertz

Emilien Peytavit, Jean-Francois Lampin

N° de brevet: FR2949905 (A1). 2011. ⟨hal-00576687⟩

• Article dans une revue

A solid-mounted resonator-oscillator-based 4.596 GHz frequency synthesis

R. Boudot, Mingdong Li, V. Giordano, Nathalie Rolland, Paul-Alain Rolland, P. Vincent

This paper describes a 4.596 GHz frequency synthesis based on a 2.1 GHz solid mounted resonator (SMR) voltage-controlled oscillator (VCO). The SMR oscillator presents a chip size lower than 2 mm(2), a power consumption of 18.2 mW, and exhibits a phase noise of -89 dBc/Hz and -131 dBc/Hz at 2 kHz...

Review of Scientific Instruments, 2011, 82, pp.034706. ⟨10.1063/1.3567010⟩. ⟨hal-00685838⟩

• Article dans une revue

Joint Carrier Frequency Offset and Fast Time-varying Channel Estimation for MIMO-OFDM Systems

Eric Pierre Simon, Laurent Ros, Hussein Hijazi, Jin Fang, Davy Gaillot, Marion Berbineau

In this paper, a novel pilot-aided algorithm is developed for MIMO-OFDM systems operating in fast time-varying environment. The algorithm has been designed to work both with parametric L-path channel model (with known path delays) and equivalent discrete-time channel model to jointly estimate the...

IEEE Transactions on Vehicular Technology, 2011, 60 (3), pp.955-965. ⟨10.1109/TVT.2011.2104970⟩. ⟨hal-00591642⟩

• Communication dans un congrès

A 60 GHz UWB impulse radio transmitter with integrated antenna in CMOS 65nm SOI technology

A. Siligaris, N. Deparis, R. Pilard, D. Gloria, Christophe Loyez, N. Rolland, L. Dussopt, Jérôme Lanteri, R. Beck, P. Vincent

This work describes an UWB impulse transmitter with integrated antenna in the 60 GHz band implemented in CMOS65nm SOI technology. The transmitter aims low-power short-range high data-rate communication systems for fast-downloading applications. It consists of an oscillator that is switched on-and-...

11th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2011, Jan 2011, Phoenix, AZ, United States. pp.153-156, ⟨10.1109/SIRF.2011.5719303⟩. ⟨hal-00799975⟩

• Article dans une revue

Indirect interband transition in hexagonal GaN

O Lancry, J.-L Farvacque, E Pichonat, Christophe Gaquière

In this paper, we report on optical investigations with Raman experiment to underline a new Ultra Violet (UV) luminescence band in hexagonal Gallium Nitride (GaN) at 4.56 eV. GaN is a direct band gap semiconductor, the photoluminescence peak corresponding to the energy gap at 3.43 eV dominates the...

Journal of Physics D: Applied Physics, 2011, 44 (7), pp.75105. ⟨10.1088/0022-3727/44/7/075105⟩. ⟨hal-00594972⟩