Publicaciones

• Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

• Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at...

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

• Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of...

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• Communication dans un congrès

Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm

J. Mo, A. Olivier, Nicolas Wichmann, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, F. Martin, O. Desplats, S. Bollaert

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4. ⟨hal-00597145⟩

• Communication dans un congrès

Systèmes radiofréquences avancés pour communication inter-puces multi-gigabits à 60GHz

S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 274, 2E8, 1-3. ⟨hal-00597147⟩

• Chapitre d'ouvrage

Ingénierie des matériaux et des structures, mécanique des solides, acoustique

Djimédo Kondo, Piotr Breitkopf, Robert Charlier, Paul Cristini, Valerie Deplano, Bertrand Dubus, Joseph Gril, Thierry Le Mogne, Frédéric Lebon, Nathalie Maurel, Nicolas Moes, Laurent Orgéas, Vincent Pagneux, Etienne Patoor, Sylvie Pommier, Claire Prada, Edgar Rauch, Jean-Jacques Sinou, Frédéric Valès, Claude Verdier

Les disciplines représentées dans la section 09 sont à la fois des disciplines de savoir, et des disciplines de l’ingénierie. On les retrouve aussi bien dans les activités de génération de connaissances de base, que dans la démarche de mise en œuvre de ces connaissances dans des réalisations...

Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, pp.169-186, 2011, ISBN 978-2-271-07263-4. ⟨hal-00799637⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Communication dans un congrès

[Invited] On-wafer S-parameters and noise measurements from D to J-band

N. Waldhoff

European Microwave Week, EuMIC/EuMC, Workshop W10 - From de-embedding to waveform engineering, 2011, Manchester, United Kingdom. ⟨hal-00807123⟩

• Article dans une revue

A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity

N. Clement, K. Nishiguchi, Jean-François Dufrêche, David Guérin, A. Fujiwara, D. Vuillaume

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte...

Applied Physics Letters, 2011, 98, pp.014104-3. ⟨10.1063/1.3535958⟩. ⟨hal-00572646⟩

• Article dans une revue

Subterahertz hypersound attenuation in silica glass studied via picosecond acoustics

Simon Ayrinhac, Marie Foret, Arnaud Devos, Benoit Ruffle, Eric Courtens, René Vacher

We report picosecond acoustic measurements in silica-glass films grown by wet thermal oxidation on a (111) silicon substrate. The longitudinal acoustic phonons are observed over the range from 150 to 300 GHz using an infrared pump and a second harmonic blue probe. The transducer is an aluminum thin...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (1), pp.014204. ⟨10.1103/PhysRevB.83.014204⟩. ⟨hal-00567412⟩