Publicaciones

• Article dans une revue

Simultaneous fabrication of superhydrophobic and superhydrophilic polyimide surfaces with low hysteresis

G. Scheen, K. Ziouche, Z. Bougrioua, P. Godts, D. Leclercq, T. Lasri

Langmuir, 2011, 27, pp.6490-6495. ⟨10.1021/la1050805⟩. ⟨hal-00597097⟩

• Communication dans un congrès

Visualisation de l'écoulement autour d'une aile d'insecte artificielle

Thomas Vanneste, Jean-Paul Bourez, Jean-Bernard Paquet, Sébastien Grondel, Eric Cattan

Le projet d'insecte artificiel IN-ART vise à la réalisation d'un nano-drone à ailes vibrantes de la taille d'un insecte en s'appuyant sur le biomimétisme pour reproduire ses battements d'ailes. Les prototypes, réalisés à l'aide des techniques de fabrication...

14ème Congrès Français de Visualisation et de Traitement d'Images en Mécanique des Fluides, FLUVISU 14, 2011, Lille, France. pp.1-9. ⟨hal-05028409⟩

• Communication dans un congrès

Tuning the Kohn anomaly in the phonon dispersion of graphene by interaction with the substrate and by doping

L. Wirtz, A. Allard, Claudio Attaccalite, M. Lazzeri, Francesco Mauri, A. Rubio

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579043⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt

D. Vu, H. Jurca, F. Maroun, P. Allongue, N. Tournerie, A. Rowe, D. Paget, S. Arscott, Emilien Peytavit

The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (12), pp.121304(R). ⟨10.1103/PhysRevB.83.121304⟩. ⟨hal-02345792⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current...

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Chapitre d'ouvrage

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

F Medjdoub

Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩

• Article dans une revue

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩

• Article dans une revue

Nanostructured polyaniline-based composites for ppb range ammonia sensing

J.L. Wojkiewicz, V.N. Bliznyuk, S. Carquigny, N. Elkamchi, N. Redon, T. Lasri, A.A. Pud, S. Reynaud

Sensors and Actuators B: Chemical, 2011, 160, pp.1394-1403. ⟨10.1016/j.snb.2011.09.084⟩. ⟨hal-00783484⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon...

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩