Publicaciones

• Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of...

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• Article dans une revue

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

S. Galambosi, L. Wirtz, J.A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hamalainen

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), pp.081413. ⟨10.1103/PhysRevB.83.081413⟩. ⟨hal-00579067⟩

• Communication dans un congrès

Study of enhanced biosensors based on 2-D sandwiched plasmon photonic crystals

Jin-Ying Zhang, He Huang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, J. Zhou, Y.P. Huang

A novel sandwich structure of photonic crystal with periodic square array of hexagon holes was fabricated. The infrared optical properties in reflectance of the devices were tested. A sharp peak of surface plasmon resonance was observed at the incident angles of 30°. By the comparison of the...

IEEE Sensors Conference, 2011, Limerick, Ireland. pp.1321-1324, ⟨10.1109/ICSENS.2011.6126900⟩. ⟨hal-00800449⟩

• Communication dans un congrès

A 10Gb/s 45mW adaptive 60GHz baseband in 65nm CMOS

C. Thakkar, L. Kong, K. Jung, A. Frappe, E. Alon

Symposia on VLSI Technology and Circuits, 2011, Kyoto, Japan. pp.24-25. ⟨hal-00800003⟩

• Communication dans un congrès

Design of 10 GHz sampling rate digital FIR filters with powers-of-two coefficients

Benjamin Parent, J. Muller, A. Kaiser, A. Cathelin

20th European Conference on Circuit Theory and Design, ECCTD 2011, 2011, Linköping, Sweden. pp.584-587, ⟨10.1109/ECCTD.2011.6043601⟩. ⟨hal-00800016⟩

• Article dans une revue

A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity

N. Clement, K. Nishiguchi, Jean-François Dufrêche, David Guérin, A. Fujiwara, D. Vuillaume

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte...

Applied Physics Letters, 2011, 98, pp.014104-3. ⟨10.1063/1.3535958⟩. ⟨hal-00572646⟩

• Communication dans un congrès

A 7-bit 18th order 9.6 GS/s FIR filter for high data rate 60-GHz wireless communications

J. Muller, B. Stefanelli, A. Frappe, L. Ye, A. Cathelin, A. Niknejad, A. Kaiser

37th European Solid-State Circuits Conference, ESSCIRC 2011, 2011, Helsinki, Finland. paper ID 5264, 67-70. ⟨hal-00800004⟩

• Communication dans un congrès

120nm AlSb/InAs HEMTs

Yannick Roelens, A. Olivier, A. Noudeviwa, L. Desplanque, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4. ⟨hal-00591362⟩

• Article dans une revue

Design, realization and test of a 2.1 GHz ultra-low phase noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

AEU. International Journal of Electronics and Communications, 2011, 65, pp.602-607. ⟨10.1016/j.aeue.2010.09.004⟩. ⟨hal-00591316⟩

• Article dans une revue

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L.E. Wernersson

Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩. ⟨hal-00592100⟩