Publicaciones

Affichage de 8951 à 8960 sur 16378


  • Article dans une revue

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidou, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, T.D. Moustakas

The effect of Fe and Si doping in GaN grown epitaxially on Al2O3 is studied using Extended X-ray Absorption Fine Structure (EXAFS) and Raman spectroscopies. The EXAFS analysis shows that in GaN samples grown by Molecular Beam Epitaxy (MBE) at 750 °C the Ga–Ga distance is about 0.19% longer than the...

Materials Science and Engineering: B, 2011, 176 (9), pp.723-726. ⟨10.1016/j.mseb.2011.02.028⟩. ⟨hal-02906735⟩

  • Communication dans un congrès

Growth of antimony-containing heterostructure nanowires by molecular beam epitaxy : crystal phase control, surfaces and interfaces

Philippe Caroff, Tao Xu, Kimberly A. Dick, S.R. Plissard, Thanh Hai Nguyen, B. Grandidier, X. Wallart

Growth of III-V nanowires has now gained some maturity and fundamental understanding of the growth mechanisms has dramatically progressed. However, there are only three families of III-Vs which have been extensively explored: nitrides, arsenides and phosphides. The growth and understanding of...

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium EE : Semiconductor nanowires - From fundamentals to applications, Apr 2011, San Francisco, CA, United States. ⟨hal-00807152⟩

  • Communication dans un congrès

Assessment of carrier multiplication in bulk PbS and PbSe

Mischa Bonn, Christophe Delerue, Joep J. H. Pijpers, Ronald Ulbricht, K.J. Tielrooijl, A. Osherov, Y. Golan, Guy Allan

Materials Research Society Spring Meeting 2011, Symposium B : Third-generation and emerging solar-cell technologies, Apr 2011, San Francisco, United States. ⟨hal-03317137⟩

  • Communication dans un congrès

What is the epistemological role of teaching physical and mathematical sciences?

Raffaele Pisano

Congresso Nazionale Mathesis 2010, Matematica: Apprendimento E Professionalità Docente Livorno, 15 –17 April, Apr 2011, Livorno, Italy. ⟨hal-04518870⟩

  • Brevet

Procédé de génération d'un scénario de bruits électromagnétiques

V. Deniau, Slimen N. Ben, J. Rioult

Région indéterminée, N° de brevet: WO2010004226 (A3) 2011-04-14. 2011, N° de priorité : FR20080054734 20080711 - N° de demande : WO2009FR51377 20090710. ⟨hal-05702520⟩

  • Brevet

Procédé de génération d'un scénario de bruits électromagnétiques

V. Deniau, Slimen N. Ben, J. Rioult

Région indéterminée, N° de brevet: EP2308192 (A2) 2011-04-13. 2011, N° de priorité : FR20080054734 20080711 - N° de demande : EP20090784505 20090710. ⟨hal-05702519⟩