Publicaciones

• Article dans une revue

Size-dependent catalytic and melting properties of platinum-palladium nanoparticles

G. Guisbiers, G. Abudukelimu, D. Hourlier

While nanocatalysis is a very active field, there have been very few studies in the size/shape-dependent catalytic properties of transition metals from a thermodynamical approach. Transition metal nanoparticles are very attractive due their high surface to volume ratio and their high surface energy...

Nanoscale Research Letters, 2011, 6, pp.396-1-5. ⟨10.1186/1556-276X-6-396⟩. ⟨hal-00639824⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman...

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the...

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were...

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Band gaps and waveguiding in phoxonic silicon crystal slabs

Yan Pennec, Bahram Djafari-Rouhani, E.H. El Boudouti, C. Li, Y. El Hassouani, Jerome O. Vasseur, N. Papanikolaou, S. Benchabane, V. Laude, A. Martinez

Chinese Journal of Physics, 2011, 49, pp.100-110. ⟨hal-00579069⟩

• Article dans une revue

Magnetoelectric memory using perpendicular magnetization states and magnetoelastic switching

Nicolas Tiercelin, Yannick Dusch, V.L. Preobrazhensky, Philippe Pernod

We present here a concept of a memory cell called MELRAM based on a magnetic element with giant magnetostriction, embedded in a piezoelectric matrix. Two equilibrium orientations of magnetization are defined by combining uniaxial anisotropy together with a magnetic polarization in the hard axis...

Journal of Applied Physics, 2011, 109 (7), pp.07D7267. ⟨10.1063/1.3559532⟩. ⟨hal-00591346⟩

• Article dans une revue

A metal-metal Fabry-Pérot cavity photoconductor for efficient GaAs terahertz photomixers

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Journal of Applied Physics, 2011, 109 (1), pp.016101. ⟨10.1063/1.3525709⟩. ⟨hal-00572645⟩

• Article dans une revue

Golden ratio-based and tapered diptera inspired wings : their design and fabrication using standard MEMS technology

X.Q. Bao, Eric Cattan

Journal of Bionic Engineering, 2011, 8, pp.174-180. ⟨10.1016/S1672-6529(11)60023-1⟩. ⟨hal-00603032⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon...

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩