Publicaciones

• Article dans une revue

Band gap engineering in simultaneous phononic and photonic crystal slabs

Bahram Djafari-Rouhani, Yan Pennec, El Houssaine El Boudouti, Jerome O. Vasseur, Youssef El Hassouani, C. Li, Abdellatif Akjouj, Driss Bria

We discuss the simultaneous existence of phononic and photonic band gaps in two types of phononic crystals slabs, namely periodic arrays of nanoholes in a Si membrane and of Si nanodots on a SiO2 membrane. In the former geometry, we investigate in detail both the boron nitride lattice and the...

Applied physics. A, Materials science & processing, 2011, 103, pp.735-739. ⟨10.1007/s00339-010-6207-x⟩. ⟨hal-00603012⟩

• Article dans une revue

Characterizing nanoscale electromechanical fatigue in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films by piezoresponse force microscopy

A. Gatoux, A. Ferri, M. Detalle, Denis Remiens, R. Desfeux

Thin Solid Films, 2011, 520, pp.591-594. ⟨10.1016/j.tsf.2011.07.032⟩. ⟨hal-00639937⟩

• Article dans une revue

Phase-locking of a 2.5 THz quantum cascade laser to a frequency comb using a GaAs photomixer

M. Ravaro, C. Manquest, C. Sirtori, S. Barbieri, G. Santarelli, K. Blary, Jean-Francois Lampin, S.P. Khanna, E.H. Linfield

Optics Letters, 2011, 36, pp.3969-3971. ⟨10.1364/OL.36.003969⟩. ⟨hal-00639918⟩

• Article dans une revue

Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

I. Iniguez-De-La-Torre, J. Mateos, Yannick Roelens, C. Gardes, S. Bollaert, T. Gonzalez

Nanotechnology, 2011, 22, pp.445203-1-5. ⟨10.1088/0957-4484/22/44/445203⟩. ⟨hal-00639808⟩

• Article dans une revue

Simulations of dual and broadband patch antenna

S. Bri, S. Zaakri, A. Nakheli, A. Mamouni

European Journal of Scientific Research, 2011, 60, pp.255-267. ⟨hal-00639939⟩

• Article dans une revue

Phonons in single-layer and few-layer MoS2 and WS2

A. Molina-Sanchez, L. Wirtz

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.155413-1-8. ⟨10.1103/PhysRevB.84.155413⟩. ⟨hal-00639887⟩

• Article dans une revue

Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery

C. Lethien, Malek Zegaoui, Pascal Roussel, P. Tilmant, N. Rolland, Paul-Alain Rolland

The paper deals with the methodology used to form regular pattern of sputtered thin films LiPON/LiFePO4 material acting respectively as the solid electrolyte and the positive electrode of the lithium ion solid state 3D micro-battery. The micromachining of the silicon periodic nanopillars array (...

Microelectronic Engineering, 2011, 88 (10), pp.3172-3177. ⟨10.1016/j.mee.2011.06.022⟩. ⟨hal-00639805⟩

• Communication dans un congrès

Etude des performances en puissance des TBH Si/SiGe pour les applications millimétriques

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, D. Ducatteau, Sylvie Lepilliet, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.6E2, 1-4. ⟨hal-00603137⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Article dans une revue

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, G. Larrieu, Emmanuel Dubois

Transmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates...

Central European Journal of Physics, 2011, 9, pp.423-427. ⟨10.2478/s11534-010-0135-4⟩. ⟨hal-00574499⟩