Publicaciones

• Communication dans un congrès

Active layers bonding of InP/GaAsSb/InP DHBTs in order to enhance thermal dissipation of InP-based devices

N.A. Thiam, Christophe Coinon, X. Wallart, M. Zaknoune

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799696⟩

• Communication dans un congrès

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799793⟩

• Article dans une revue

Multiple description coding and scalable video coding combined with multiple input multiple output techniques : two strategies to enhance train to wayside video transmissions in tunnels

Imade Fatani, Yann Cocheril, Crépin Nsiala-Nzéza, Marion Berbineau, François-Xavier Coudoux, Marie Zwingelstein, Patrick Corlay

Video monitoring applications for underground rely on wireless train-to-wayside communication systems which require high data rate as well as high Quality of Service (QoS) level. In order to satisfy both constraints we propose a combined source and channel coding approach in the context of MIMO (...

Lecture Notes in Computer Science, 2011, 6596, pp.83-94. ⟨10.1007/978-3-642-19786-4_8⟩. ⟨hal-00591348⟩

• Article dans une revue

Compliance at the GaSb/GaP interface by misfit dislocations array

S. El Kazzi, L. Desplanque, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart

Advanced Materials Research, 2011, 324, pp.85-88. ⟨10.4028/www.scientific.net/AMR.324.85⟩. ⟨hal-00795909⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman...

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were...

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the...

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Negative refraction of elastic waves in 2D phononic crystals : contribution of resonant transmissions to the construction of the image of a point source

Anne-Christine Hladky, Charles Croënne, Bertrand Dubus, Jerome O. Vasseur, L. Haumesser, D. Manga, B. Morvan

Negative refraction properties of a two-dimensional phononic crystal (PC), made of a triangular lattice of steel rods embedded in epoxy are investigated both experimentally and numerically. First, experiments have been carried out on a prism shaped PC immersed in water. Then, for focusing purposes...

AIP Advances, 2011, 1 (4), pp.0414054. ⟨10.1063/1.3676177⟩. ⟨hal-00783381⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1...

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩