Publicaciones

Affichage de 9001 à 9010 sur 16261


  • Communication dans un congrès

[Invited] Monte Carlo simulation of quantum cascade lasers

Jean-Luc Thobel

IV Workshop on Physics and Technology of Semiconductor Lasers, 2011, Kazimierz Dolny, Poland. ⟨hal-00807622⟩

  • Article dans une revue

Magnetoelectric memory cell using multiferroic nanostructures and magnetoelastic switching

Nicolas Tiercelin, Yannick Dusch, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2011, 2, pp.16-20. ⟨hal-00783385⟩

  • Article dans une revue

Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

Microwave and Optical Technology Letters, 2011, 53, pp.405-409. ⟨10.1002/mop.25690⟩. ⟨hal-00572638⟩

  • Article dans une revue

A 45° silicon mirror for acoustic propagation parallel to the plane of the substrate

S. Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Assane Ndieguene, X. Zhao

The interest of a thin silicon oxide layer on a {110} silicon crystal planes used as 45° acoustical mirrors for reflection has been demonstrated. Passive mirror-like planes (groove depth ∼ 150 μm) were fabricated by wet chemical etching of (100) silicon. High frequency acoustical longitudinal waves...

Journal of Physics: Conference Series, 2011, 269, pp.012009-1-10. ⟨10.1088/1742-6596/269/1/012009⟩. ⟨hal-00572671⟩

  • Communication dans un congrès

Electromagnetism in multicoaxial negative-index metamaterial cables

Bahram Djafari-Rouhani, M. Kushwaha

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579034⟩

  • Communication dans un congrès

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher, Yvon Cordier, Fabrice Semond, Virginie Brandli, Bertrand Grimbert, Achraf Ben Amar, Matthieu Werquin, Christophe Boyaval, Christophe Gaquière, Didier Theron, Lionel Buchaillot

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as...

24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩. ⟨hal-00579046⟩

  • Communication dans un congrès

Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

B. Hackens, F. Martins, S. Faniel, V. Bayot, M. Pala, H. Sellier, S. Huant, L. Desplanque, X. Wallart

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579035⟩