Publicaciones

• Autre publication scientifique

Etude et optimisation de dispositifs à base de matériaux faible gap pour applications hautes fréquences et ultra faible consommation

Albert M.D. Noudeviwa

2011. ⟨hal-00799384⟩

• Autre publication scientifique

Fabrication de nanostructures en silicium pour le développement de surfaces superomniphobes et pour la désorption/ionisation assistée par laser de biomolécules en vue de leur analyse par spectrométrie de masse

Thi Phuong Nhung Nguyen

2011. ⟨hal-00799472⟩

• Communication dans un congrès

Phase-controlling properties in phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, NM, United States. Paper Phononics-2011-0069, 164-165. ⟨hal-00799670⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For...

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current...

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Article dans une revue

Resolution limit of a phononic crystal superlens

J.F. Robillard, J. Bucay, P.A. Deymier, A. Shelke, K. Muralidharan, B. Merheb, Jerome O. Vasseur, A. Sukhovich, J.H. Page

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.224301-1-11. ⟨10.1103/PhysRevB.83.224301⟩. ⟨hal-00603011⟩

• Communication dans un congrès

Nanocomposants AlGaN/GaN : application à la détection THz

P. Sangare, B. Grimbert, M. Faucher, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 305, 2C4, 1-4. ⟨hal-00603132⟩

• Ouvrages

Electromagnetic Reverberation Chambers

Philippe Besnier, Bernard Démoulin

Dedicated to a complete presentation on all aspects of reverberation chambers, this book provides the physical principles behind these test systems in a very progressive manner. The detailed panorama of parameters governing the operation of electromagnetic reverberation chambers details various...

ISTE/Wiley, pp.400, 2011, P.N.Favennec. ⟨hal-00640424⟩