Publicaciones

• Article dans une revue

Novel approach of UWB multi-band system based on orthogonal function for transports applications

F. Elbahhar, A. Lamari, Atika Rivenq, Jean-Michel Rouvaen, Marc Heddebaut, Tariq Boukour, Laila Sakkila

Ultra Wide Band (UWB) is based on the transmission of very short pulses with relatively low energy. This technology may see increased use in the wireless communications and sensing application. Having the available bandwidth of 7.5 GHz and the minimum signal bandwidth of 500 MHz, UWB systems can be...

European Physical Journal: Applied Physics, 2011, 53 (3), pp.33608-1-6. ⟨10.1051/epjap/2011100067⟩. ⟨hal-00672786⟩

• Brevet

Procédé de fabrication de transistors MOSFET complémentaires de type P et N, et dispositif électronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif

Guilhem Larrieu, Emmanuel Dubois

• Article dans une revue

Star-drops formed by periodic excitation and on an air cushion - A short review

Philippe Brunet, Jacco H Snoeijer

When simply put on a solid, a liquid drop usually adopts the shape of a spherical cap or a puddle depending on its volume and on the wetting conditions. However, when the drop is subjected to a periodic field, a parametric excitation can induce a transition of shape and can break the drop’s initial...

The European Physical Journal. Special Topics, 2011, 192, pp.207-226. ⟨10.1140/epjst/e2011-01375-5⟩. ⟨hal-00579074⟩

• Thèse

Étude et conception d'un système IR-UWB dédié aux communications sans fils haut débit, Study and design of IR-UWB system dedicated to high speed wireless communication

Amel El Abed

L’objectif de ce travail de thèse est la mise en œuvre de nouvelles techniques de codage pour les signaux Ultra Large Bande (ULB) dans le but d’augmenter le débit offert et améliorer la robustesse du lien de communication pour des applications multimédias et transport (communication véhicule-..., The main objective of this thesis is to implement new UWB coding techniques in order to increase the data rate flow and to enhance the robustness ensured by UWB communication for multimedia and transports applications (vehicle –Infrastructure communication). The UWB is an emerging and promising...

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2011. Français. ⟨NNT : 2012VALE0004⟩. ⟨tel-03416574⟩

• Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

• Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at...

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

• Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of...

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩

• Communication dans un congrès

Growth of zinc oxide nanorods in water vapor environment and its promising role in solar cell

Basma El Zein, I. Gereige, S. Boulfrad, A. Gokarna, El Hadj Dogheche, Didier Decoster, S. Habib, G. Jabbour

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800057⟩

• Communication dans un congrès

Growth of antimony-containing nanowires

Philippe Caroff, Kimberly A. Dick, C. Thelander, S.R. Plissard, X. Wallart

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591392⟩