Publicaciones

• Communication dans un congrès

Phase-controlling properties in phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, NM, United States. Paper Phononics-2011-0069, 164-165. ⟨hal-00799670⟩

• Article dans une revue

Golden ratio-based and tapered diptera inspired wings : their design and fabrication using standard MEMS technology

X.Q. Bao, Eric Cattan

Journal of Bionic Engineering, 2011, 8, pp.174-180. ⟨10.1016/S1672-6529(11)60023-1⟩. ⟨hal-00603032⟩

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For...

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current...

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn

Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩

• Article dans une revue

Effect of dimensional parameters on the current of MSM photodetector

Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with...

Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Article dans une revue

Resolution limit of a phononic crystal superlens

J.F. Robillard, J. Bucay, P.A. Deymier, A. Shelke, K. Muralidharan, B. Merheb, Jerome O. Vasseur, A. Sukhovich, J.H. Page

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.224301-1-11. ⟨10.1103/PhysRevB.83.224301⟩. ⟨hal-00603011⟩