Publicaciones

• Communication dans un congrès

Antenne microstrip alimentée par fente inversée pour l'intégration hétérogène 3D (system-in-package) en gamme millimétrique [60GHz]

T. Sarrazin, R. Crunelle, O. Lafond, Mohamed Himdi, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 327, 4E7, 1-4. ⟨hal-00597140⟩

• Article dans une revue

Performance of multi-relay coded cooperative diversity in asynchronous code-division multiple-access over fading channels

A. Eid, W. Hamouda, Iyad Dayoub

IET Communications, 2011, 5, pp.683-692. ⟨10.1049/iet-com.2010.0478⟩. ⟨hal-00597103⟩

• Communication dans un congrès

Détermination de l'épaisseur d'une couche par ultrasons-laser

Sabrina Fourez, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807689⟩

• Communication dans un congrès

Étude et correction du couplage inter-éléments dans les réseaux de transducteurs ultrasonores

Abdelmajid Bybi, Christian Granger, Mohamed Rguiti, Anne-Christine Hladky, Sébastien Grondel, Jamal Assaad

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807692⟩

• Communication dans un congrès

[Invited] THz quantum cascade lasers. Coherent control of terahertz quantum cascade laser emission

S. Barbieri, P. Gellie, G. Santarelli, M. Ravaro, L. Ding, W. Maineult, P. Filloux, C. Manquest, C. Sirtori, Jean-Francois Lampin, R. Colombelli, S.P. Khanna, E.H. Linfield, A.G. Davies, H. Beere, D. Ritchie

European Microwave Week, EuMIC/EuMC, Workshop W01 : Terahertz technologies - from devices to diverse systems, 2011, Manchester, United Kingdom. ⟨hal-00807697⟩

• Article dans une revue

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report...

IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.1172-1179. ⟨10.1109/TNANO.2011.2123913⟩. ⟨hal-00639857⟩

• Article dans une revue

Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology

N. Clement, G. Patriarche, K. Smaali, Francois Vaurette, K. Nishiguchi, David Troadec, A. Fujiwara, D. Vuillaume

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical...

Small, 2011, 7, pp.2607-2613. ⟨10.1002/smll.201100915⟩. ⟨hal-00639861⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled...

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

• Article dans une revue

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland

A report is presented on high-speed 100nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm=530mS/mm, a maximum current of 1.74A/mm, and current gain and maximum oscillation cutoff...

Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩. ⟨hal-00783379⟩

• Communication dans un congrès

News on the theoretical spectroscopy of boron nitride nanostructures

L. Wirtz, Claudio Attaccalite, A. Marini, M. Bockstedte, A. Rubio

Annual Meeting of the GDR-I GNT 'Graphene and Nanotubes', 2011, Dourdan, France. ⟨hal-00807592⟩