Publicaciones

• Communication dans un congrès

ZnO nanowires for photovoltaic devices

Basma El Zein, S. Habib, El Hadj Dogheche, Didier Decoster, A. Gokarna

6th International Conference on Materials for Advanced Technologies, ICMAT 2011, Symposium O : Photovoltaic Materials and Devices, 2011, Singapore, Singapore. ⟨hal-00807222⟩

• Communication dans un congrès

Quantum cascade transistor

H. Nguyen Van, M. Zaknoune, J.C. Moreno, A. N. Baranov, R. Teissier

11th International Conference on Intersubband Transitions in Quantum Wells, ITQW 2011, 2011, Badesi, Sardinia, Italy. ⟨hal-00807126⟩

• Communication dans un congrès

Coherency of counterpropagating ultrasound beams under degenerated parametric magnetoacoustic interaction in polycrystalline ferrite

L. Krutyansky, Vladimir Preobrazhensky, Philippe Pernod

International Conference "Functional Materials", ICFM 2011, 2011, Partenit, Crimea, Ukraine. ⟨hal-00807175⟩

• Communication dans un congrès

Molecular electronics

D. Vuillaume

2nd NANO-TEC Workshop, Benchmarking of new beyond CMOS device/design concepts, 2011, Athens, Greece. ⟨hal-00807192⟩

• Article dans une revue

Interacting Lewis-X carbohydrates in condensed phase : a first-principles molecular dynamics study

R. Zucca, M. Boero, C. Massobrio, C. Molteni, F. Cleri

Journal of Physical Chemistry B, 2011, 115, pp.12599-12606. ⟨10.1021/jp2055816⟩. ⟨hal-00783405⟩

• Article dans une revue

Nanostructured polyaniline-based composites for ppb range ammonia sensing

J.L. Wojkiewicz, V.N. Bliznyuk, S. Carquigny, N. Elkamchi, N. Redon, T. Lasri, A.A. Pud, S. Reynaud

Sensors and Actuators B: Chemical, 2011, 160, pp.1394-1403. ⟨10.1016/j.snb.2011.09.084⟩. ⟨hal-00783484⟩

• Article dans une revue

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩

• Article dans une revue

IEMN/LEMAC magneto-mechanical microjets and micro-hotwires and aerodynamic active flow control

Philippe Pernod, A. Merlen, Abdelkrim Talbi, Vladimir Preobrazhensky, R. Viard, L. Gimeno, O. Ducloux

International Journal of Aerodynamics, 2011, 1, pp.243-261. ⟨10.1504/IJAD.2011.038844⟩. ⟨hal-00591322⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current...

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For...

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩