Publicaciones

Affichage de 9171 à 9180 sur 16287


  • Article dans une revue

Surface passivation effects on AlGaN/GaN high electron mobility transistors with SiO2

M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2175-2177. ⟨10.1166/sl.2011.1787⟩. ⟨hal-00795918⟩

  • Article dans une revue

Growth of GaN based structures on focused ion beam patterned GaN

Yvon Cordier, Olivier Tottereau, Lee Nguyen, Mohammed Réda Ramdani, Ali Soltani, Mohamed Boucherit, David Troadec, Fang-Yuh Lo, Y.Y. Hu, Arne Ludwig, Andreas D Wieck

Focused ion beam technique is a powerful tool for defining patterns within a semiconductor film. In this paper, we show that it is possible to realize patterns such as disks and columns within thick GaN templates and that it is compatible with the regrowth of GaN based heterostructures. We study...

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (5), pp.1516-1519. ⟨10.1002/pssc.201000882⟩. ⟨hal-00603099⟩

  • Article dans une revue

Potential of the high modal bandwidth OM4 glass multimode fiber for the multi-services concept

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, P.A. Rolland

Optics Communications, 2011, 284, pp.585-589. ⟨10.1016/j.optcom.2010.09.058⟩. ⟨hal-00572632⟩

  • Communication dans un congrès

Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

B. Hackens, F. Martins, S. Faniel, V. Bayot, M. Pala, H. Sellier, S. Huant, L. Desplanque, X. Wallart

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579035⟩

  • Communication dans un congrès

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher, Yvon Cordier, Fabrice Semond, Virginie Brandli, Bertrand Grimbert, Achraf Ben Amar, Matthieu Werquin, Christophe Boyaval, Christophe Gaquière, Didier Theron, Lionel Buchaillot

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as...

24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩. ⟨hal-00579046⟩

  • Communication dans un congrès

Leaky waveguide radar system for fall on track object detection and identification

A. Mroue, M. Heddebaut, F. Elbahhar, Atika Rivenq

9th World Congress on Railway Research, WCRR 2011, 2011, Lille, France. pp.D11P, 1-10. ⟨hal-00800246⟩

  • Communication dans un congrès

Optimal design of non intuitive compliant microgripper with high resolution

A. Grira, Bernard Legrand, C. Rotinat-Libersa, E. Mairiaux, L. Buchaillot

IEEE/RSJ International Conference on Intelligent Robots and Systems, IROS 2011, 2011, San Francisco, CA, United States. pp.45-50, ⟨10.1109/IROS.2011.6048665⟩. ⟨hal-00800034⟩

  • Communication dans un congrès

Properties of GaN and InN films in terahertz range

A. Gauthier-Brun, J.H. Teng, W. Liu, M. Tonouchi, El Hadj Dogheche, A. Gokarna, S.J. Chua, Didier Decoster

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800062⟩

  • Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin silicon membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor-Torres

7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011, 2011, Granada, Spain. pp.125-126. ⟨hal-00800088⟩