Publicaciones

• Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

• Article dans une revue

Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers

Nicolas Tiercelin, Yannick Dusch, A. Klimov, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Applied Physics Letters, 2011, 99, pp.192507-1-3. ⟨10.1063/1.3660259⟩. ⟨hal-00639833⟩

• Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin Si membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin Light Scattering (BLS) spectroscopy. The dispersion relations of the confined phonons were calculated from a semi-analytical model based on continuum elasticity theory. Green’s function simulations...

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, United States. pp.218-219. ⟨hal-00800075⟩

• Article dans une revue

Phase-controlling phononic crystal

N. Swinteck, J.F. Robillard, S. Bringuier, J. Bucay, K. Muralidharan, Jerome O. Vasseur, K. Runge, P.A. Deymier

Applied Physics Letters, 2011, 98, pp.103508-1-3. ⟨10.1063/1.3559599⟩. ⟨hal-00591321⟩

• Article dans une revue

Microwave evaluation of Pb(0.4)Sr(0.6)TiO(3) thin films prepared by magnetron sputtering on silicon : performance comparison with Ba(0.3)Sr(0.7)TiO(3) thin films

Freddy Ponchel, X. Lei, Denis Remiens, Gang Wang, X. Dong

Applied Physics Letters, 2011, 99, pp.172905-1-3. ⟨10.1063/1.3656065⟩. ⟨hal-00783535⟩

• Article dans une revue

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

A. Stolz, E. Cho, El Hadj Dogheche, Yidir Androussi, David Troadec, Dimitris Pavlidis, Didier Decoster

The waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism...

Applied Physics Letters, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩. ⟨hal-00591332⟩

• Article dans une revue

Compromising radiated emission from a power line communication cable

Virginie Degardin, Pierre Laly, M. Lienard, Pierre Degauque

Journal of Communications Software and Systems, 2011, 7, pp.16-21. ⟨hal-00597099⟩

• Article dans une revue

An overview of 60 GHz location systems operating in multipath environments

Michael Bocquet, Christophe Loyez, N. Rolland

International Journal of Microwave and Wireless Technologies, 2011, 3, pp.223-230. ⟨10.1017/S1759078711000365⟩. ⟨hal-00597098⟩

• Article dans une revue

Chemical functionalization of electrodes for detection of gaseous nerve agents with carbon nanotube field-effect transistors

M. Delalande, S. Clavaguera, M. Toure, A. Carella, S. Lenfant, D. Deresmes, D. Vuillaume, J.P. Simonato

Chemical Communications, 2011, 47, pp.6048-6050. ⟨10.1039/C1CC11517K⟩. ⟨hal-00597074⟩

• Article dans une revue

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used...

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩