Publicaciones

Affichage de 9221 à 9230 sur 16106


  • Article dans une revue

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O3 thin films deposited by radio frequency sputtering

Denis Remiens, L. Yang, Freddy Ponchel, Jean-François Legier, D. Chateigner, Gang Wang, X. Dong

Journal of Applied Physics, 2011, 109, pp.114106-1-11. ⟨10.1063/1.3592282⟩. ⟨hal-00603029⟩

  • Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

  • Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin Si membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin Light Scattering (BLS) spectroscopy. The dispersion relations of the confined phonons were calculated from a semi-analytical model based on continuum elasticity theory. Green’s function simulations...

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, United States. pp.218-219. ⟨hal-00800075⟩

  • Article dans une revue

Phase-controlling phononic crystal

N. Swinteck, J.F. Robillard, S. Bringuier, J. Bucay, K. Muralidharan, Jerome O. Vasseur, K. Runge, P.A. Deymier

Applied Physics Letters, 2011, 98, pp.103508-1-3. ⟨10.1063/1.3559599⟩. ⟨hal-00591321⟩

  • Article dans une revue

Microwave evaluation of Pb(0.4)Sr(0.6)TiO(3) thin films prepared by magnetron sputtering on silicon : performance comparison with Ba(0.3)Sr(0.7)TiO(3) thin films

Freddy Ponchel, X. Lei, Denis Remiens, Gang Wang, X. Dong

Applied Physics Letters, 2011, 99, pp.172905-1-3. ⟨10.1063/1.3656065⟩. ⟨hal-00783535⟩

  • Article dans une revue

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Vikram Passi, Florent Ravaux, Emmanuel Dubois, Simon Clavaguera, Alexandre Carella, Caroline Celle, Jean-Pierre Simonato, Luca Silvestri, Susanna Reggiani, Dominique Vuillaume, Jean-Pierre Raskin

—The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynyl-benzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous...

IEEE Electron Device Letters, 2011, 32, pp.1-3. ⟨10.1109/LED.2011.2146750⟩. ⟨cea-01344105⟩