Publicaciones

Affichage de 9271 à 9280 sur 16273


  • Communication dans un congrès

[Invited] A neuro-inspired, memristive-like, nanoparticle-organic memory FET (NOMFET) for neural network computations and circuits

D. Vuillaume

Journée Thématique Technologies Emergentes - Memristors, 2011, Palaiseau, France. ⟨hal-00807193⟩

  • Communication dans un congrès

Améliorer les photomélangeurs THz

P. Latzel

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-3. ⟨hal-00806719⟩

  • Communication dans un congrès

Impurity and phonon scattering in silicon nanowires

Wenxing Zhang, Martin P. Persson, Hector Mera, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579042⟩

  • Article dans une revue

Electrosynthesis and analysis of the electrochemical properties of a composite material : polyaniline + titanium oxide

S. Abaci, B. Nessark, Rabah Boukherroub, K. Lmimouni

Thin Solid Films, 2011, 519, pp.3596-3602. ⟨10.1016/j.tsf.2011.01.277⟩. ⟨hal-00579072⟩

  • Article dans une revue

Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si nanowires

A. Nikolenko, V. Strelchuk, A. Klimovskaya, P. Lytvyn, M. Valakh, Y. Pedchenko, A. Voroschenko, D. Hourlier

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8, pp.1012-1016. ⟨10.1002/pssc.201000409⟩. ⟨hal-00579054⟩

  • Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

  • Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled...

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

  • Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

  • Article dans une revue

Unprecedented robust antiferromagnetism in fluorinated hexagonal perovskites

M. Sturza, H. Kabbour, S. Daviero-Minaud, D. Filimonov, K. Pokholok, Nicolas Tiercelin, F. Porcher, L. Aldon, O. Mentre

Journal of the American Chemical Society, 2011, 133, pp.10901-10909. ⟨10.1021/ja2028603⟩. ⟨hal-00639870⟩