Publicaciones

• Article dans une revue

10GbE and radio over fiber dual transmission through polymer optical fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.112502-1-3. ⟨10.1143/APEX.4.112502⟩. ⟨hal-00639809⟩

• Article dans une revue

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the...

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩

• Article dans une revue

Phase-controlling phononic crystals : realization of acoustic boolean logic gates

S. Bringuier, N. Swinteck, Jerome O. Vasseur, J.F. Robillard, K. Runge, K. Muralidharan, P.A. Deymier

Journal of the Acoustical Society of America, 2011, 130, pp.1919-1925. ⟨10.1121/1.3631627⟩. ⟨hal-00639811⟩

• Article dans une revue

Shielded cable transfer impedance measurements in the microwave range of 1 GHz to 10 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 229, pp.52-61. ⟨hal-00639920⟩

• Article dans une revue

InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, Virginie Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2011, 32, pp.1537-1539. ⟨10.1109/LED.2011.2166949⟩. ⟨hal-00639917⟩

• Article dans une revue

Complex permittivity of low loss materials in the X band

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Science and Advanced Technology, 2011, 1, pp.221-224. ⟨hal-00639915⟩

• Article dans une revue

Dark-current-free petawatt laser-driven wakefield accelerator based on electron self-injection into an expanding plasma bubble

S y Kalmykov, S A Yi, Alexandre Beck, a F Lifschitz, X Davoine, E Lefebvre, V Khudik, G Shvets, M C Downer

A dark-current-free plasma accelerator driven by a short (≤150 fs) self-guided petawatt laser pulse is proposed. The accelerator uses two plasma layers, one of which, short and dense, acts as a thin nonlinear lens. It is followed by a long rarefied plasma (~1017 electrons cm−3) in which background...

Plasma Physics and Controlled Fusion, 2011, 53 (1), pp.014006. ⟨10.1088/0741-3335/53/1/014006⟩. ⟨hal-01164312⟩

• Communication dans un congrès

Caractérisation des matériaux diélectriques en band X pour des applications de télécommunications

M.D. Belrhriti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Maroc. CDROM, session A2, papier 408, 1-2. ⟨hal-00591365⟩

• Communication dans un congrès

Efficient adaptation to channel state changes based on H.264/AVC transrating for power line transmission of video streams

Christophe Deknudt, A.S. Bacquet, Patrick Corlay, François-Xavier Coudoux, M. Slachciak

IEEE International Symposium on Power Line Communications and its Applications, ISPLC 2011, 2011, Italy. pp.CFP11843-USB, 141-145, ⟨10.1109/ISPLC.2011.5764380⟩. ⟨hal-00591355⟩

• Communication dans un congrès

Monte Carlo simulation of electrical and thermal properties of nanowire-based insulated gate transistors

T. Sadi, Jean-Luc Thobel, F. Dessenne, Christophe Dalle

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591397⟩