Publicaciones

• Chapitre d'ouvrage

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

F Medjdoub

Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩

• Communication dans un congrès

Phase-controlling properties in phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, NM, United States. Paper Phononics-2011-0069, 164-165. ⟨hal-00799670⟩

• Article dans une revue

A metal-metal Fabry-Pérot cavity photoconductor for efficient GaAs terahertz photomixers

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Journal of Applied Physics, 2011, 109 (1), pp.016101. ⟨10.1063/1.3525709⟩. ⟨hal-00572645⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For...

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current...

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Communication dans un congrès

Propagation et filtrage des ondes acoustiques dans un cristal phononique bicouche AlN-TiN : étude théorique et expérimentale

S. Hemon, Y. El Hassouani, Yan Pennec, A. Soltani, Abdelkrim Talbi, A. Djouadi, Bahram Djafari-Rouhani, Abdellatif Akjouj

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807261⟩

• Communication dans un congrès

Charge generation efficiency of core-shell Si nanowires

T. Xu, J.P. Nys, Maxime Berthe, B. Grandidier, D. Stievenard, G. Patriarche, W. Chen, R. Larde, E. Cadel, P. Pareige, D.H.K. Murthy, T.J. Savenije

2èmes Journées Nanosciences et Nanotechnologies du C'nano Nord-Ouest, J2NO 2011, 2011, Rouen, France. ⟨hal-00807231⟩