Publicaciones

• Communication dans un congrès

Wide-band receiver architecture with flexible blocker filtering techniques

C. Izquierdo, A. Kaiser, F. Montaudon, P. Cathelin

17th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010, 2010, Greece. pp.894-897, ⟨10.1109/ICECS.2010.5724656⟩. ⟨hal-00579039⟩

• Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTs

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

SPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States. ⟨hal-01904174⟩

• Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated...

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

• Article dans une revue

Calculating Kelvin force microscopy signals from static force fields

Lukasz Borowik, Koku Kusiaku, Didier Theron, Thierry Melin

We present an analytical formula to achieve numerical simulations of Kelvin force microscopy KFM signals from static force fields, which can be employed to describe amplitude-modulation or frequency-modulation KFM, as well as simultaneous topography and KFM modes for which the tip probe exhibits a...

Applied Physics Letters, 2010, 96, pp.103119-1-3. ⟨10.1063/1.3323098⟩. ⟨hal-00549047⟩

• Article dans une revue

Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure

P. Borowik, Jean-Luc Thobel, L. Adamowicz

Results of multiparticle Monte Carlo simulations of midinfrared quantum cascade lasers structure initially fabricated by Page et al. are presented. The main aim of this paper is to discuss in details how electric current flows through the structure and which subbands are involved in this process....

Journal of Applied Physics, 2010, 108 (7), pp.073106. ⟨10.1063/1.3488909⟩. ⟨hal-00549482⟩

• Article dans une revue

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate : analysis by two-dimensional tangential finite element method

Freddy Ponchel, J. Midy, Jean-François Legier, Caroline Soyer, Denis Remiens, T. Lasri, G. Gueguan

Journal of Applied Physics, 2010, 107, pp.054112-1-5. ⟨10.1063/1.3309423⟩. ⟨hal-00549504⟩

• Article dans une revue

Further studies on the lithium phosphorus oxynitride solid electrolyte

T. Pichonat, C. Lethien, Nicolas Tiercelin, S. Godey, E. Pichonat, P. Roussel, Marie Colmont, P.A. Rolland

First step in the way to the fabrication of an all-solid microbattery for autonomous wireless sensor node, amorphous thin solid films of lithium phosphorus oxynitride (LiPON) were prepared by radio-frequency sputtering of a mixture target of P₂O₅/Li<...

Materials Chemistry and Physics, 2010, 123, pp.231 - 235. ⟨10.1016/j.matchemphys.2010.04.001⟩. ⟨hal-00514193⟩

• Article dans une revue

Development of a new generation of active AFM tools for applications in liquids

A.S. Rollier, D.F.L. Jenkins, El Hadj Dogheche, Bernard Legrand, M. Faucher, L. Buchaillot

Journal of Micromechanics and Microengineering, 2010, 20, pp.085010-1-11. ⟨10.1088/0960-1317/20/8/085010⟩. ⟨hal-00548990⟩

• Article dans une revue

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, O. Fathallah, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2010, 405, pp.2337-2339. ⟨10.1016/j.physb.2010.02.042⟩. ⟨hal-00549453⟩

• Article dans une revue

LP MOCVD growth of InAlN/GaN HEMT heterostructure : comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.A. Di Forte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, S. Delage

Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩. ⟨hal-00549909⟩