Publicaciones

Affichage de 9501 à 9510 sur 16075


  • Communication dans un congrès

Integrative technology-based approach of MEMS for biological applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

IEEE International Solid-State Circuits Conference, 2010, San Francisco, United States. 12 p. ⟨hal-00865906⟩

  • Article dans une revue

Image reconstruction using a photonic crystal based flat lens operating at 1.55 μm

M. Hofman, D. Lippens, O. Vanbesien

Applied optics, 2010, 49, pp.5806-5813. ⟨10.1364/AO.49.005806⟩. ⟨hal-00548625⟩

  • Communication dans un congrès

A multifunctional 60-GHz system for automotive applications with communication and positioning abilities based on time reversal

Michael Bocquet, Christophe Loyez, C. Lethien, N. Deparis, M. Heddebaut, Atika Rivenq, N. Rolland

7th European Radar Conference, EuRAD 2010, 2010, France. pp.61-64. ⟨hal-00550029⟩

  • Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, M.A. Poisson, S. Delage

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612620⟩. ⟨hal-00550019⟩

  • Communication dans un congrès

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Christophe Gaquière

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident...

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩

  • Communication dans un congrès

Comparison of low phase noise oscillators topologies using BAW resonator

M. Li, S. Seok, N. Rolland, P.A. Rolland, H. El Aabbaoui, E. de Foucauld, P. Vincent

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.345-348. ⟨hal-00549942⟩

  • Communication dans un congrès

Vertical coaxial transitions for MM-waves 3D integration technologies

R. Crunelle, S. Seok, J. Kim, M. Fryziel, N. Rolland, A. Cathelin, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.101-104. ⟨hal-00549940⟩

  • Article dans une revue

Negative refraction of surface acoustic waves in the subgigahertz range

Bernard Bonello, Laurent Belliard, Juliette Pierre, Jerome O. Vasseur, Bernard Perrin, Olga Boyko-Kazymyrenko

We used the picosecond ultrasonic technique to experimentally demonstrate the negative refraction of surface acoustic waves in a two-dimensional phononic crystal. The sample is made of a square lattice of circular voids drilled at the surface of a thick silica substrate. The lattice parameter is of...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104109-1-5. ⟨10.1103/PhysRevB.82.104109⟩. ⟨hal-00549435⟩

  • Article dans une revue

Silicon wafer characterisation by laser ultrasonics and neural networks

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Physics: Conference Series, 2010, 214, pp.012042 -1-5. ⟨10.1088/1742-6596/214/1/012042⟩. ⟨hal-00549913⟩