Publicaciones

• Communication dans un congrès

Molecular relaxation dynamics in organic monolayer junctions

N. Clement, S. Pleutin, D. Vuillaume

International Conference on Molecular Electronics, 2010, Emmetten, Switzerland. ⟨hal-00574097⟩

• Communication dans un congrès

Thermal characterization of MBE-grown GaN/AlGaN/GaN on single crystalline diamond

J. Kuzmik, S. Bychikhin, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas, R. Balmer, D. Pogany

6th International Workshop on Nitride Semiconductors, IWN2010, 2010, Tampa, FL, United States. ⟨hal-00573557⟩

• Article dans une revue

Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach

X.L. Han, G. Larrieu, Emmanuel Dubois

Journal of Nanoscience and Nanotechnology, 2010, 10, pp.7423-7427. ⟨10.1166/jnn.2010.2841⟩. ⟨hal-00549625⟩

• Communication dans un congrès

Millimeter-wave frequency tunable microstrip antenna on ultraflexible PDMS substrate

S. Hage-Ali, Nicolas Tiercelin, P. Coquet, R. Sauleau, Vladimir Preobrazhensky, Philippe Pernod

IEEE International Symposium on Antennas and Propagation and CNC/USNC/URSI Radio Science Meeting, APS-URSI 2010, 2010, Toronto, Canada. pp.1-4, ⟨10.1109/APS.2010.5561288⟩. ⟨hal-00549963⟩

• Article dans une revue

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Physical Review Letters, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩

• Article dans une revue

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩

• Article dans une revue

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Wenxing Zhang, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

Using a sp3d5s∗ tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩

• Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

• Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

• Article dans une revue

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩