Publicaciones

• Communication dans un congrès

Sol-gel synthesis and thin films development of CuIn(Ga)S2 : an energy solar scavenging device used for wireless autonomous systems

Y. Bourlier, C. Lethien, R. Bernard, P. Roussel, D. Deresmes, Malek Zegaoui, M. Bouazaoui, Paul-Alain Rolland, N. Rolland

International Photovoltaic Technical Conference, PVTC 2011, " Thin Film & Advanced Solutions 2011 ", 2011, Aix-en-Provence, France. ⟨hal-00591388⟩

• Article dans une revue

Geometry pattern for the wire organic electrochemical textile transistor

X.Y. Tao, V. Koncar, C. Dufour

Journal of The Electrochemical Society, 2011, 158, pp.H572-H577. ⟨10.1149/1.3562962⟩. ⟨hal-00591319⟩

• Autre publication scientifique

Transport quantique dans des nanostructures semiconductrices

Renaud Leturcq

2011. ⟨hal-00591733⟩

• Communication dans un congrès

Phoxonic Crystals : A review

Sarah Benchabane, Said Sadat-Saleh, Maria-Pilar Bernal, Jean-Charles Beugnot, Vincent Laude, Yan Pennec, Bahram Djafari-Rouhani, Nikos Papanikolaou, Alejandro Martinez

Periodically structured materials exhibiting simultaneous photonic and phononic band gaps offer unprecedented ways to tailor photon-phonon interactions. A review of the works reported on these materials, sometimes termed "phoxonic crystals", is presented before highlighting theoretical...

Phononics 2011, May 2011, Sante Fe, United States. pp.84. ⟨hal-00639453⟩

• Article dans une revue

Monte Carlo studies of the band-bending in GaAs/Al0.45Ga0.55As quantum-cascade laser

J. Konupek, P. Borowik, Jean-Luc Thobel, L. Adamowic

Photonics Letters of Poland, 2011, 3, pp.49-51. ⟨10.4302/plp.2011.2.02⟩. ⟨hal-00639912⟩

• Communication dans un congrès

Calibration of the non linear vector network analyzer (PNA-X) for probe measurements

R. Ouhachi, D. Ducatteau, Christophe Gaquière, T. Lacave, P. Chevalier, D. Gloria

6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.81-84. ⟨hal-00800112⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential...

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at...

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of...

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Communication dans un congrès

Long wavelength determination of a strained quantum well structure based on GaxIn1-x-yAsySb1-y/GaSb for gas detection

Abdelkader Aissat, Said Nacer, H. Aliane, Jean-Pierre Vilcot

In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct...

Saudi International Electronics, Communications and Photonics Conference, SIECPC 2011, 2011, Riyadh, Saudi Arabia. pp.1-3, ⟨10.1109/SIECPC.2011.5876979⟩. ⟨hal-00800058⟩