Publicaciones

Affichage de 9581 à 9590 sur 16098


  • Article dans une revue

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩

  • Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

  • Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

  • Article dans une revue

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩

  • Communication dans un congrès

Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, Christophe Gaquière, H. Maaref

27th International Conference on Microelectronics, MIEL 2010, 2010, pp.479-481, ⟨10.1109/MIEL.2010.5490440⟩. ⟨hal-00550032⟩

  • Communication dans un congrès

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

F. Lecourt, Y. Douvry, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, S. Bouzid, M. Renvoise, D. Smith, H. Maher

40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩. ⟨hal-00549999⟩

  • Communication dans un congrès

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Albert M.D. Noudeviwa, Yannick Roelens, Francois Danneville, Aurélien Olivier, Nicolas Wichmann, Nicolas Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, Joseph Bellaiche, Derek Smith, Hassan Maher, S. Bollaert

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease...

5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289. ⟨hal-00549927⟩

  • Communication dans un congrès

A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon

N. Meng, J. Ferrer-Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.294-297. ⟨hal-00549928⟩

  • Communication dans un congrès

Synthesis and characterization of crystalline silicon ribbons on insulator using catalytic Vapor-Liquid-Solid growth inside a cavity

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki, D. Delille, C. Maurice, David Troadec

6th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2010, 2010, France. pp.99-100. ⟨hal-00549974⟩