Publicaciones

• Communication dans un congrès

Etude du rayonnement électromagnétique des convertisseurs statiques

T. Duquesne, A. Buonomo, N. Idir, S. Baranowski

16ème Colloque National de la Recherche dans les IUT, CNRIUT 2010, 2010, Angers, France. ⟨hal-00574432⟩

• Communication dans un congrès

Band offsets in PbSe/CdSe core-shell nanocrystals

Justin Habinshuti, Y. Justo, T.H. Nguyen, O. Cristini, F. Bourne, J.J. Gallet, Z. Hens, S. Turrell, B. Grandidier

Nanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany. ⟨hal-00574408⟩

• Communication dans un congrès

Morphology of <111>-oriented Si nanowire and its physical origin

T. Xu, J.P. Nys, Maxime Berthe, B. Grandidier, D. Stievenard

• Communication dans un congrès

Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices

L. Desplanque, D. Vignaud, S. Godey, S.R. Plissard, E. Cadio, X. Wallart, P. Liu, H. Sellier

16th International Conference on Molecular Beam Epitaxy, MBE 2010, 2010, Berlin, Germany. ⟨hal-00573659⟩

• Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, M.A. Poisson, S. Delage

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612620⟩. ⟨hal-00550019⟩

• Communication dans un congrès

THz quantum cascade lasers. Coherent control of terahertz quantum cascade laser emission

S. Barbieri, P. Gellie, G. Santarelli, M. Ravaro, L. Ding, W. Maineult, P. Filloux, C. Manquest, C. Sirtori, Jean-Francois Lampin, R. Colombelli, S.P. Khanna, E.H. Linfield, A.G. Davies, H. Beere, D. Ritchie

European Microwave Week Workshops and Short Courses, THz Technologies and Applications, 2010, Paris, France. ⟨hal-00573654⟩

• Communication dans un congrès

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Christophe Gaquière

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident...

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩

• Article dans une revue

Engineering sticky superomniphobic surfaces on transparent and flexible PDMS substrate

Renaud Dufour, Maxime Harnois, Yannick Coffinier, Vincent Thomy, Rabah Boukherroub, Vincent Senez

Following the achievement of superhydrophobicity which prevents water adhesion on a surface, superomniphobicity extends this high repellency property to a wide range of liquids, including oils, solvents, and other low surface energy liquids. Recent theoretical approaches have yield to specific...

Langmuir, 2010, 26 (22), pp.17242-17247. ⟨10.1021/la103462z⟩. ⟨hal-00549492⟩

• Article dans une revue

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, P.A. van Aken, N. Reckinger, Emmanuel Dubois

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of...

Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩

• Article dans une revue

Confined VLS growth and structural characterization of silicon nanoribbons

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

Confined VLS growth is proposed to produce single crystalline silicon (c-Si) film over an amorphous oxide layer, without crystalline seed. The guided growth of Si nanoribbons (NRs) is successfully demonstrated and characterized using several electron microscopy techniques. First, VLS growth is...

Microelectronic Engineering, 2010, 87 (5-8), pp.1522-1526. ⟨10.1016/j.mee.2009.11.053⟩. ⟨hal-00549560⟩