Publicaciones

• Article dans une revue

AlGaN/GaN HEMT on (111) single crystalline diamond

M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, Christophe Gaquière, E. Kohn

Electronics Letters, 2010, 46, pp.299-300. ⟨10.1049/el.2010.2937⟩. ⟨hal-00549443⟩

• Article dans une revue

Effects of ultrathin TiOx seeding layer on crystalline orientation and electrical properties of sputtered (Ba,Sr)TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2136-2139. ⟨10.1111/j.1551-2916.2010.03677.x⟩. ⟨hal-00549507⟩

• Article dans une revue

0-3 and 1-3 piezo-composites based on single crystal PMN-PT for transducer applications

F. Levassort, Anne-Christine Hladky, H. Le Khanh, L.P. Tran-Huu-Hue, M. Lethiecq, M. Pham Thi

Advances in Applied Ceramics, 2010, 109, pp.162-168. ⟨10.1179/174367509X12472364601075⟩. ⟨hal-00549550⟩

• Article dans une revue

Two-dimensional simulation of the single-sided air-coupled ultrasonic pitch-catch technique for non-destructive testing

S. Delrue, K. van den Abeele, E. Blomme, J. Deveugele, P. Lust, Olivier Bou Matar

Ultrasonics, 2010, 50, pp.188-196. ⟨10.1016/j.ultras.2009.08.005⟩. ⟨hal-00549561⟩

• Article dans une revue

Metallographic and numerical studies of the role of catalyst particles of MgH2-Mg system

M. Celino, A. Montone, F. Cleri, A. Aurora, D. Mirabile-Gattia, S. Giusepponi, M. Vittori-Antisari

Defect and Diffusion Forum, 2010, 297-301, pp.263-268. ⟨10.4028/www.scientific.net/DDF.297-301.263⟩. ⟨hal-00549631⟩

• Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device...

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

• Article dans une revue

(Multi)exciton dynamics and exciton polarizability in colloidal InAs quantum dots

Joep J. H. Pijpers, M.T.W. Milder, C. Delerue, Mischa Bonn

We report steady state and dynamic properties of (multi)excitons in InAs quantum dots using femtosecond time-resolved transient absorption and time-resolved terahertz spectroscopy. The polarizability of confined excitons in the ground state is found to be of the order of 104 Å3, increasing sharply...

Journal of Physical Chemistry C, 2010, 114 (14), pp.6318-6324. ⟨10.1021/jp911948z⟩. ⟨hal-00549022⟩

• Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

• Article dans une revue

Dual phononic and photonic band gaps in a periodic array of pillars deposited on a thin plate

Y. El Hassouani, C. Li, Yan Pennec, E.H. El Boudouti, H. Larabi, Abdellatif Akjouj, Olivier Bou Matar, V. Laude, N. Papanikolaou, A. Martinez, Bahram Djafari-Rouhani

We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell which include the simple square, triangular and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.155405-1-7. ⟨10.1103/PhysRevB.82.155405⟩. ⟨hal-00549058⟩

• Article dans une revue

Faceted sidewalls of silicon nanowires : Au-induced structural reconstructions and electronic properties

T. Xu, J.P. Nys, A. Addad, O.I. Lebedev, A. Urbieta, B. Salhi, Maxime Berthe, B. Grandidier, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.115403-1-10. ⟨10.1103/PhysRevB.81.115403⟩. ⟨hal-00549070⟩