Publicaciones

• Communication dans un congrès

A frequency tunable millimeter-wave planar antenna using L10-FePt patterned element

S. Hage-Ali, Yannick Dusch, Nicolas Tiercelin, Philippe Coquet, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod

55th Annual Conference on Magnetism and Magnetic Materials, Nov 2010, Atlanta, United States. ⟨hal-00583479⟩

• Article dans une revue

Metallographic and numerical studies of the role of catalyst particles of MgH2-Mg system

M. Celino, A. Montone, F. Cleri, A. Aurora, D. Mirabile-Gattia, S. Giusepponi, M. Vittori-Antisari

Defect and Diffusion Forum, 2010, 297-301, pp.263-268. ⟨10.4028/www.scientific.net/DDF.297-301.263⟩. ⟨hal-00549631⟩

• Article dans une revue

0-3 and 1-3 piezo-composites based on single crystal PMN-PT for transducer applications

F. Levassort, Anne-Christine Hladky, H. Le Khanh, L.P. Tran-Huu-Hue, M. Lethiecq, M. Pham Thi

Advances in Applied Ceramics, 2010, 109, pp.162-168. ⟨10.1179/174367509X12472364601075⟩. ⟨hal-00549550⟩

• Communication dans un congrès

Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range

F. Lecourt, Y. Douvry, N. Defrance, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.33-36. ⟨hal-00549995⟩

• Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device...

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

• Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

• Article dans une revue

Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires

J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson

Journal of Physical Chemistry C, 2010, 114, pp.3837-3842. ⟨10.1021/jp910821e⟩. ⟨hal-00548709⟩

• Article dans une revue

Optically power supplied Gbit/s wireless hotspot using 1.55 µm THz photomixer and heterodyne detection at 200 GHz

Guillaume Ducournau, P. Szriftgiser, Denis Bacquet, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Jean-Francois Lampin

A wireless transmission system with a remote-supplied hotspot is demonstrated working up to gigabit data rates. The emission uses a 200 GHz carrier frequency, generated using an 1.55 µm photomixer composed of an unitravelling carrier photodiode monolithically integrated with a wide bandwidth...

Electronics Letters, 2010, 46, pp.1349-1350. ⟨10.1049/el.2010.2062⟩. ⟨hal-00548731⟩

• Article dans une revue

Faceted sidewalls of silicon nanowires : Au-induced structural reconstructions and electronic properties

T. Xu, J.P. Nys, A. Addad, O.I. Lebedev, A. Urbieta, B. Salhi, Maxime Berthe, B. Grandidier, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.115403-1-10. ⟨10.1103/PhysRevB.81.115403⟩. ⟨hal-00549070⟩

• Article dans une revue

60 GHz current gain cut-off frequency graphene nanoribbon FET

N. Meng, F.J. Ferrer, D. Vignaud, Gilles Dambrine, H. Happy

International Journal of Microwave and Wireless Technologies, 2010, 2, pp.441-444. ⟨10.1017/S175907871000070X⟩. ⟨hal-00548564⟩