Publicaciones

• Communication dans un congrès

Évaluation numérique des propriétés d'un canal de transmission pour application des courants porteurs en ligne (CPL) dans un avion

S. Bertuol, I. Junqua, Virginie Degardin, Pierre Degauque, M. Lienard

15ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM 2010, 2010, France. pp.CDROM, E3-1, 1-6. ⟨hal-00573209⟩

• Communication dans un congrès

Novel geometry pattern for wire organic electrochemical textile transistor

X. Tao, V. Koncar, C. Dufour

10th World Textile Conference, AUTEX 2010, 2010, Vilnius, Lithuania. ⟨hal-00574107⟩

• Communication dans un congrès

Thermal characterization of MBE-grown GaN/AlGaN/GaN on single crystalline diamond

J. Kuzmik, S. Bychikhin, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas, R. Balmer, D. Pogany

6th International Workshop on Nitride Semiconductors, IWN2010, 2010, Tampa, FL, United States. ⟨hal-00573557⟩

• Communication dans un congrès

Couplage spin-orbite dans une boîte quantique InAs : vers la manipulation électrique d'un qubit de spin

R. Leturcq, A. Pfund, I. Shorubalko, K. Enssin

Journées du Réseau National en Nanosciences et en Nanotechnologies, J3N 2010, 2010, Lille, France. ⟨hal-00574123⟩

• Communication dans un congrès

Amorphous silicon regrowth mechanisms, orientation effects and defects generation : insight from molecular dynamics simulation

Christophe Krzeminski, E. Lampin

European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium I : Advanced silicon materials research for electronic and photovoltaic applications II, 2010, Strasbourg, France. ⟨hal-00574101⟩

• Communication dans un congrès

Ultrasonic characterization of fluid saturated absorbing polymethylacrylate porous plates

S. Derible, Pierre Campistron, G. Freiha, H. Franklin, Bertrand Nongaillard

Joint 159th ASA Meeting and Noise-Con 2010, 2010, Baltimore, MD, United States. ⟨hal-00591739⟩

• Communication dans un congrès

Size-dependent properties of platinum-based bimetallic nanoparticles

G. Guisbiers, G. Abudukelimu, D. Hourlier

5th International Conference on Surfaces, Coatings and Nano-Structured Materials, NANOSMAT-5, 2010, Reims, France. ⟨hal-00591744⟩

• Article dans une revue

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Ophélie Lancry, Emmanuelle Pichonat, Julien Réhault, Myriam Moreau, Raphaël Aubry, Christophe Gaquière

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes...

Solid-State Electronics, 2010, 54, pp.1434 - 1437. ⟨10.1016/j.sse.2010.05.029⟩. ⟨hal-00514166⟩

• Article dans une revue

Transport through open quantum dots : making semiclassics quantitative

I. Brezinova, L. Wirtz, S. Rotter, C. Stampfer, J. Burgdorfer

We investigate electron transport through clean open quantum dots (“quantum billiards”). We present a semiclassical theory that allows to accurately reproduce quantum transport calculations. Quantitative agreement is reached for individual energy and magnetic field dependent elements of the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.125308-1-19. ⟨10.1103/PhysRevB.81.125308⟩. ⟨hal-00549445⟩

• Article dans une revue

Correlation-induced conductance suppression at level degeneracy in a quantum dot

H.A. Nilsson, O. Karlström, M. Larsson, P. Caroff, J.N. Pedersen, L. Samuelson, A. Wacker, L.E. Wernersson, H.Q. Xu

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing...

Physical Review Letters, 2010, 104 (18), pp.186804. ⟨10.1103/PhysRevLett.104.186804⟩. ⟨hal-00548700⟩