Publicaciones

Affichage de 9821 à 9830 sur 16175


  • Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,...

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

  • Communication dans un congrès

Joint carrier frequency offset and fast time-varying channel estimation for MIMO-OFDM systems

E.P. Simon, H. Hijazi, L. Ros

7th International Symposium on Communication Systems Networks and Digital Signal Processing, CSNDSP 2010, 2010, United Kingdom. pp.167-172. ⟨hal-00568648⟩

  • Communication dans un congrès

Compromising electromagnetic field radiated by in-house PLC lines

Pierre Degauque, Pierre Laly, Virginie Degardin, M. Lienard, L. Diquelou

IEEE Global Telecommunications Conference, GLOBECOM 2010, 2010, United States. pp.1-5, ⟨10.1109/GLOCOM.2010.5683144⟩. ⟨hal-00568647⟩

  • Article dans une revue

Coating of polyethylene terephthalate nonwoven fabrics with indium zinc oxide solutions at low temperature by sol-gel process

X. Tao, V. Koncar, C. Dufour, N. Onar, A. Aksit

Journal of Textiles and Engineers, 2010, 17, pp.79-1-6. ⟨hal-00568578⟩

  • Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

  • Article dans une revue

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche

Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩

  • Article dans une revue

Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy

H. Mosbahi, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Optoelectronics and Advanced Materials - Rapid Communications, 2010, 4, pp.1783-1785. ⟨hal-00567897⟩

  • Article dans une revue

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer

Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩