Publicaciones

• Article dans une revue

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩

• Article dans une revue

Imperfection-sensitive ductility of aluminium thin films

M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen

Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩

• Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device...

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

• Article dans une revue

Two-dimensional simulation of the single-sided air-coupled ultrasonic pitch-catch technique for non-destructive testing

S. Delrue, K. van den Abeele, E. Blomme, J. Deveugele, P. Lust, Olivier Bou Matar

Ultrasonics, 2010, 50, pp.188-196. ⟨10.1016/j.ultras.2009.08.005⟩. ⟨hal-00549561⟩

• Article dans une revue

Effects of ultrathin TiOx seeding layer on crystalline orientation and electrical properties of sputtered (Ba,Sr)TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2136-2139. ⟨10.1111/j.1551-2916.2010.03677.x⟩. ⟨hal-00549507⟩

• Article dans une revue

Terahertz photomixers based on ultra-wideband horn antennas, Photomélangeurs térahertz à antennes cornet ultra-large bande

Alexandre Beck, Tahsin Akalin, Guillaume Ducournau, Emilien Peytavit, Jean-Francois Lampin

We review recent advances in the development of new terahertz photomixers based on the integration of an ultrafast photodetector with an ultra-wideband transverse electromagnetic wave horn antenna. We expose first a simplified theory of this antenna, the choice of the dimensions and the results of..., Cet article expose le développement récent d'une nouvelle génération de photomélangeurs térahertz basés sur l'intégration d'un photodétecteur ultra-rapide avec une antenne ultra-large bande de type cornet à onde transverse électromagnétique. Nous exposons d'abord la théorie...

Comptes Rendus. Physique, 2010, 11, pp.472-479. ⟨10.1016/j.crhy.2010.05.006⟩. ⟨hal-00548958⟩

• Article dans une revue

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

• Article dans une revue

Fabrication and investigation of 1D and 2D structures in LiNbO3 thin films by pulsed laser ablation

F. Mériche, A. Boudrioua, R. Kremer, El Hadj Dogheche, E. Neiss-Clauss, R. Mouras, A. Fischer, M.-R. Beghoul, E. Fogarassy, N. Boutaoui

Optical Materials, 2010, 32 (11), pp.1427-1434. ⟨10.1016/j.optmat.2010.05.010⟩. ⟨hal-00512035⟩

• Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Nina Diakonova, A. El Fatimy, Y. Meziani, T. Otsuji, Dominique Coquillat, Wojciech Knap, Frederic Teppe, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M. A. Poisson, S. Delage

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1. ⟨hal-00636136⟩

• Communication dans un congrès

Baseband Fading Channel Simulator for Inter-Vehicle Communication using SystemC-AMS

Abdelbasset Massouri, Antoine Lévêque, Laurent Clavier, Michel Vasilevski, Andreas Kaiser, Marie-Minerve Louerat

System level modeling and simulation have become a key issue in analyzing, optimizing and designing wireless systems. In this paper, modeling RF front end devices and radio propaga- tion channel especially fading time-variant channel for Inter- Vehicle Communication using SystemC-AMS are...

2010 IEEE International Behavioral Modeling and Simulation Conference (BMAS 2010), Sep 2010, San Jose, CA, United States. pp.36-41. ⟨hal-00632156⟩