Publicaciones

Affichage de 9871 à 9880 sur 16273


  • Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, M.A. Poisson, S. Delage

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612620⟩. ⟨hal-00550019⟩

  • Article dans une revue

Growth and electric properties of MPB BiScO3-PbTiO3 thin films on La0.7Sr0.3MnO3-coated silicon substrates

S.A. Zhang, X.L. Dong, Y. Chen, F. Cao, Y.Y. Zhang, G.S. Wang, N. Sama, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1583-1585. ⟨10.1111/j.1551-2916.2010.03630.x⟩. ⟨hal-00549506⟩

  • Article dans une revue

Silicon-based micromembranes with piezoelectric actuation and piezoresistive detection for sensing purposes in liquid media

Thomas Alava, Fabrice Mathieu, L. Mazenq, Caroline Soyer, Denis Remiens, Liviu Nicu

Journal of Micromechanics and Microengineering, 2010, 20, pp.075014-1-8. ⟨10.1088/0960-1317/20/7/075014⟩. ⟨hal-00549532⟩

  • Article dans une revue

Bottom and top electrodes nature and PZT film thickness influence on electrical properties

N. Sama, Caroline Soyer, Denis Remiens, C. Verrue, R. Bouregba

Sensors and Actuators A: Physical , 2010, 158, pp.99-105. ⟨10.1016/j.sna.2009.11.032⟩. ⟨hal-00549503⟩

  • Article dans une revue

Micromachining SU-8 pivot structures using AZ photoresist as direct sacrificial layers for a large wing displacement

X.Q. Bao, Thomas Dargent, Eric Cattan

Journal of Micromechanics and Microengineering, 2010, 20, pp.025005-1-13. ⟨10.1088/0960-1317/20/2/025005⟩. ⟨hal-00549518⟩

  • Communication dans un congrès

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Christophe Gaquière

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident...

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩

  • Communication dans un congrès

A multifunctional 60-GHz system for automotive applications with communication and positioning abilities based on time reversal

Michael Bocquet, Christophe Loyez, C. Lethien, N. Deparis, M. Heddebaut, Atika Rivenq, N. Rolland

7th European Radar Conference, EuRAD 2010, 2010, France. pp.61-64. ⟨hal-00550029⟩

  • Communication dans un congrès

Vertical coaxial transitions for MM-waves 3D integration technologies

R. Crunelle, S. Seok, J. Kim, M. Fryziel, N. Rolland, A. Cathelin, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.101-104. ⟨hal-00549940⟩

  • Article dans une revue

Silicon wafer characterisation by laser ultrasonics and neural networks

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Physics: Conference Series, 2010, 214, pp.012042 -1-5. ⟨10.1088/1742-6596/214/1/012042⟩. ⟨hal-00549913⟩