Publicaciones
Affichage de 9881 à 9890 sur 16288
Comparison of classical and orthogonal UWB waveforms for radar applications
Laila Sakkila, Atika Rivenq, C. Tatkeu, Yassin El Hillali, Fouzia Boukour, Jean-Michel Rouvaen
6th International Colloquium on Signal Processing & its Applications, CSPA 2010, 2010, Malaysia. pp.1-5, ⟨10.1109/CSPA.2010.5545276⟩. ⟨hal-00568621⟩
Joint carrier frequency offset and fast time-varying channel estimation for MIMO-OFDM systems
E.P. Simon, H. Hijazi, L. Ros
7th International Symposium on Communication Systems Networks and Digital Signal Processing, CSNDSP 2010, 2010, United Kingdom. pp.167-172. ⟨hal-00568648⟩
Compromising electromagnetic field radiated by in-house PLC lines
Pierre Degauque, Pierre Laly, Virginie Degardin, M. Lienard, L. Diquelou
IEEE Global Telecommunications Conference, GLOBECOM 2010, 2010, United States. pp.1-5, ⟨10.1109/GLOCOM.2010.5683144⟩. ⟨hal-00568647⟩
[Invité] Intégration de nouveaux matériaux actifs dans les MEMS
Philippe Pernod
5èmes Journées Nationales du GdR Micro et Nano Systèmes, 2010, Ecully, France. ⟨hal-00808178⟩
Amplitude modulation and stabilisation of QC lasers
C. Sirtori, S. Barbieri, P. Gellie, S. Laurent, J. Teissier, Jean-Francois Lampin
SPIE Optics+Photonics, Terahertz Emitters, Receivers, and Applications, 2010, San Diego, CA, United States. ⟨hal-00808322⟩
Sensitivity of plasmonic nanostructures coated with thin oxide films for refractive index sensing : experimental and theoretical investigations
E. Galopin, J. Niedziolka-Jonsson, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, A. Noual, Rabah Boukherroub, Sabine Szunerits
Journal of Physical Chemistry C, 2010, 114, pp.11769-11775. ⟨10.1021/jp1023839⟩. ⟨hal-00549439⟩
Tuning and switching the hypersonic phononic properties of elastic impedance contrast nanocomposites
A. Sato, Yan Pennec, N. Shingne, T. Thum-Albrecht, W. Knoll, M. Steinhart, Bahram Djafari-Rouhani, G. Fytas
ACS Nano, 2010, 4, pp.3471-3481. ⟨10.1021/nn100519h⟩. ⟨hal-00549446⟩
Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates
Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer
Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩
Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics
Yannick Roelens, A. Olivier, L. Desplanque, A. Noudeviwa, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert
68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩. ⟨hal-00549924⟩
AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz
N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage
IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩