Publicaciones

• Communication dans un congrès

Characterization of black silicon structural and electrical properties for photovoltaics applications

R. Torres, Thomas Derrien, V. Vervisch, Mathieu Halbwax, F. Torregrosa, L. Roux, P. Delaporte, T. Sarnet, M. Sentis

European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium I : Advanced silicon materials research for electronic and photovoltaic applications II, 2010, Strasbourg, France. ⟨hal-00574120⟩

• Communication dans un congrès

Etude d'une cellule métal/oxyde/pentacène/métal par spectroscopie d'admittance

R. Ledru, D. Zander, B. Grouiez, K. Lmimouni, D. Vuillaume, G. Gelle

4ème Congrès sur les Dispositifs Electroniques Organiques, DIELOR 2010, 2010, Giens, France. ⟨hal-00574077⟩

• Article dans une revue

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems

K. Smaali, S. Lenfant, S. Karpe, M. Oçafrain, P. Blanchard, D. Deresmes, S. Godey, A. Rochefort, J. Roncali, D. Vuillaume

A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x103 (with an average value of 1.5x103) is reported. The "on" conductance state is clearly identified to the cis...

ACS Nano, 2010, 4, pp.2411-2421. ⟨10.1021/nn100295x⟩. ⟨hal-00548965⟩

• Communication dans un congrès

Evolution des performances électriques des transistors des filières GaN sous l’effet d’irradiation

Fanny Berthet, Yannick Guhel, B. Boudart, Jean Lionel Trolet, M. Piccione, Christophe Gaquière

Rencontres Jeunes Chercheurs, 2010, Annecy, France. ⟨hal-01654495⟩

• Article dans une revue

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩

• Article dans une revue

Bottom and top electrodes nature and PZT film thickness influence on electrical properties

N. Sama, Caroline Soyer, Denis Remiens, C. Verrue, R. Bouregba

Sensors and Actuators A: Physical , 2010, 158, pp.99-105. ⟨10.1016/j.sna.2009.11.032⟩. ⟨hal-00549503⟩

• Communication dans un congrès

High efficiency optoelectronic terahertz sources

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Francis Hindle, Gaël Mouret

We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon...

SPIE Optics+Photonics, Terahertz Emitters, Receivers, and Applications, Aug 2010, San Diego, CA, United States. pp.77630A-1-7, ⟨10.1117/12.860883⟩. ⟨hal-00591738⟩

• Article dans une revue

Au-Si and Au-Ge phases diagrams for nanosytems

D. Hourlier, P. Perrot

Materials Science Forum, 2010, 653, pp.77-85. ⟨10.4028/www.scientific.net/MSF.653.77⟩. ⟨hal-00591737⟩

• Communication dans un congrès

Submillimetric high resolution passive imaging system using synthesis aperture technique

G. Desruelles, N. Rolland, P. Rolland

7th European Radar Conference, EuRAD 2010, 2010, France. pp.280-283. ⟨hal-00549934⟩

• Communication dans un congrès

Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires

V. Passi, J.P. Raskin, F. Ravaux, Emmanuel Dubois

23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, 2010, China. pp.464-467, ⟨10.1109/MEMSYS.2010.5442464⟩. ⟨hal-00549973⟩