Publications

• Article dans une revue

Silicon-microtube scaffold decorated with anatase TiO2 as a negative electrode for a 3D litium-ion microbattery

Etienne Eustache, Pascal Tilmant, Laurence Morgenroth, Pascal Roussel, Gilles Patriarche, David Troadec, Nathalie Rolland, Thierry Brousse, Christophe Lethien

An optimized scaffold based on silicon microtubes is designed to increase the surface capacity of 3D lithium-ion microbatteries. High-depth, mechanically robust microstructures are fabricated using microelectronic facilities. Conformal deposition of anatase TiO2 is achieved using atomic layer…

Advanced Energy Materials, 2014, 4, 1301612, 11 p. ⟨10.1002/aenm.201301612⟩. ⟨hal-00999999⟩

• Article dans une revue

Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

Achraf Ben Amar, Marc Faucher, Virginie Brandli, Yvon Cordier, Didier Theron

This paper presents a Young's modulus extraction method for thin film group III-nitrides materials such as GaN, AlN, and its ternary AlGaN. The AlGaN/GaN heterostructures are grown by molecular beam epitaxy on Si (111) substrate and designed for MEMS applications. Various cantilevers with a…

physica status solidi (a), 2014, 211, pp.1655-1659. ⟨10.1002/pssa.201330339⟩. ⟨hal-01044844⟩

• Article dans une revue

Surface asymmetry of coated spherical nanoparticles

Amélie H.R. Koch, Gaëtan Lévêque, Sebastian Harms, Karmena Jaskiewicz, Max Bernhardt, Andreas Henkel, Carsten Sönnichsen, Katharina Landfester, George Fytas

We validate the nonspherical grafting arrangement of isotropically coated spherical nanoparticles as very recently proposed. We utilize localized surface plasmon resonance enhanced dynamic polarized and depolarized light scattering from Au nanoparticles, the spherical symmetry of which was revealed…

Nano Letters, 2014, 14, pp.4138-4144. ⟨10.1021/nl501783x⟩. ⟨hal-01044850⟩

• Article dans une revue

Gold-free ternary III-V antimonide nanowire arrays on silicon : twin-free down to the first bilayer

Sònia Conesa-Boj, Dominik Kriegner, Xiang-Lei Han, S.R. Plissard, Xavier Wallart, Julian Stangl, Anna Fontcuberta I Morral, Philippe Caroff

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for…

Nano Letters, 2014, 14, pp.326-332. ⟨10.1021/nl404085a⟩. ⟨hal-00926662⟩

• Article dans une revue

Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

Jun Ge, Denis Remiens, Xianlin Dong, Ying Chen, Jean Costecalde, Feng Gao, Fei Cao, Genshui Wang

We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3 can be enhanced for the (110) or (111) SrTiO3 substrate orientation,…

Applied Physics Letters, 2014, 105 (11), pp.112908. ⟨10.1063/1.4896156⟩. ⟨hal-03525829⟩

• Communication dans un congrès

Développement de matériaux hybrides par voie sol-gel limitant l'endommagement laser

F. Compoint, C. Ambard, H. Piombini, P. Belleville, K. Valle, Carmen Navarro Sanchez, P. Ruello, Marc Duquennoy

Journées SOL-GEL 2014, 2014, Tours, France. ⟨hal-00996834⟩

• Article dans une revue

Interface dipole : effects on threshold voltage and mobility for both amorphous and poly-crystalline organic field effect transistors

C. Celle, C. Suspène, M. Ternisien, S. Lenfant, David Guérin, K. Smaali, K. Lmimouni, J.P. Simonato, Dominique Vuillaume

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship…

Organic Electronics, 2014, 15, pp.729-737. ⟨10.1016/j.orgel.2014.01.003⟩. ⟨hal-00939052⟩

• Article dans une revue

Disorder-perturbed Landau levels in high-electron-mobility epitaxial graphene

Simon Maëro, Abderrezak Torche, Thanyanan Phuphachong, Emiliano Pallecchi, Abdelkarim Ouerghi, Robson Ferreira, Louis-Anne de Vaulchier, Yves Guldner

We show that the Landau levels in epitaxial graphene in the presence of localized defects are significantly modified compared to those of an ideal system. We report on magnetospectroscopy experiments performed on high-quality samples. Besides typical interband magneto-optical transitions, we…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90, pp.195433. ⟨hal-01156613⟩

• Article dans une revue

Insulin loaded iron magnetic nanoparticle–graphene oxide composites: synthesis, characterization and application for in vivo delivery of insulin

Kostiantyn Turcheniuk, Manakamana Khanal, Anastasiia Motorina, Palaniappan Subramanian, Alexandre Barras, Vladimir Zaitsev, Victor Kuncser, Aurel Leca, Alain Martoriati, Katia Cailliau-Maggio, Jean-Francois Bodart, Rabah Boukherroub, Sabine Szunerits

One of the focal subjects in insulin delivery is the development of insulin formulations that protect the native insulin from degradation under acidic pH in the stomach. In this work we show, for the first time, that a graphene oxide (GO) based matrix can ensure the stability of insulin at low pH.…

RSC Advances, 2014, RSC Advances, 4 (2), pp.865-875. ⟨10.1039/C3RA46307A⟩. ⟨hal-03103275⟩

• Article dans une revue

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

F. Volpi, M. Braccini, Arnaud Devos, G. Raymond, A. Pasturel, Pascal Morin

In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films…

Journal of Applied Physics, 2014, 116 (4), pp.043506. ⟨10.1063/1.4887814⟩. ⟨hal-01053211⟩