Publications
Affichage de 6351 à 6360 sur 15061
Electric charge band gaps in phononic crystals
S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi
2nd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Optomechanics, PHONONICS 2013, 2013, Sharm El-Sheikh, Egypt. Paper PHONONICS-2013-0148, 120-121. ⟨hal-00881292⟩
Focused ion beam Ga3+ for the realization of piezoelectric PZT nano structures
Denis Remiens
3rd International Conference on Nanotek & Expo, 2013, Las Vegas, NV, United States. ⟨hal-00947582⟩
Gain of spatial diversity techniques in tunnel environment
M. Lienard, Jose Maria Molina-Garcia-Pardo, Pierre Degauque, Davy Gaillot
17th WSEAS International Conference on Communications, CIRCOM 2013, 2013, Rhodes Island, Greece. paper 70303-106, 99-103. ⟨hal-00994840⟩
News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning
L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩
Giant piezoresistance in silicon nanowires
A.C.H. Rowe, J.S. Milne, S. Arscott
Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, 2013, San Francisco, CA, United States. ⟨hal-00811788⟩
Electric charge band gaps in phononic crystals
S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi
IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00934423⟩
A high resolution nonvolatile analog memory ionic devices
L. Gao, F. Alibart, D.B. Strukov
4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩
Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors
N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume
22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩
RF power potential of high-k metal gate 28 nm CMOS technology
R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, D. Gloria
International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩
Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz
A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger
IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩