Publications

• Article dans une revue

Modelling of bulk acoustic wave devices built on piezoelectric stack structures : impedance matrix analysis and network representation

Victor Y. Zhang, Bertrand Dubus, Jean-Etienne Lefebvre, Tadeusz Gryba

The fundamental electro-acoustic properties of a solid layer are deduced in terms of its impedance matrix (Z) and represented by a network for modeling the bulk acoustic wave devices built on piezoelectric stacked structures. A piezoelectric layer is described by a three-port equivalent network, a…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2008, 55 (3), pp.704-716. ⟨10.1109/TUFFC.2008.695⟩. ⟨hal-00360089⟩

• Article dans une revue

Electromagnetic compatibility analysis of unstructured mains networks for high-speed data transmission : part 1

S. Battermann, H. Garbe, F. Silva, M. Pous, V. Beauvois, K. Vantomme, J. Catrysse, J. Newbury, Virginie Degardin, M. Liénard, Pierre Degauque, I.D. Flintoft, A.D. Papatsoris, D.W. Welsh, A.C. Marvin

IET Science Measurement and Technology, 2008, 2, pp.146-153. ⟨10.1049/iet-smt:20070055⟩. ⟨hal-00360048⟩

• Article dans une revue

Impulsive noise characterization of in-vehicle power line

Virginie Degardin, M. Lienard, Pierre Degauque, E. Simon, Pierre Laly

IEEE Transactions on Electromagnetic Compatibility, 2008, 50, pp.861-868. ⟨10.1109/TEMC.2008.2006851⟩. ⟨hal-00360056⟩

• Communication dans un congrès

Evaluation of the water content in phenolic resin plates via nonlinear ultrasonic measurements

J. Fortineau, F. Vander Meulen, L. Haumesser, Olivier Bou Matar

18th International Symposium on Nonlinear Acoustics, ISNA-18, 2008, Sweden. pp.517-520, ⟨10.1063/1.2956272⟩. ⟨hal-00360394⟩

• Communication dans un congrès

Tremendous shrinking of terahertz plasmon resonance linewidth in multichannel high-electron-mobility transistor

A. Shchepetov, Chantal Gardes, Yannick Roelens, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis, G. Valusis, V.V. Popov

EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM. ⟨hal-00360410⟩

• Article dans une revue

Explosive dynamics and localization of wave triads in a coupled magnetoelastic system

Vladimir Preobrazhensky, Olivier Bou Matar, Philippe Pernod

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2008, 78, pp.046603-1-4. ⟨10.1103/PhysRevE.78.046603⟩. ⟨hal-00356658⟩

• Article dans une revue

Sagittal acoustic waves in finite solid-fluid superlattices: band-gap structure, surface and confined modes, and omnidirectional reflection and selective transmission

Y. El Hassouani, E.H. El Boudouti, Bahram Djafari-Rouhani, H. Aynaou

Using a Green’s function method, we present a comprehensive theoretical analysis of the propagation of sagittal acoustic waves in superlattices (SLs) made of alternating elastic solid and ideal fluid layers. This structure may exhibit very narrow pass bands separated by large stop bands. In…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.174306-1-23. ⟨10.1103/PhysRevB.78.174306⟩. ⟨hal-00357386⟩

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Ouvrages

Scienze e Religioni. Il ruolo delle scienze naturali, ipotesi di studio e prospettive (Sciences and Religions. The role of natural sciences, study hypotheses and perspectives)

Rafel Pascual, Raffaele Pisano

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩