Publications

Affichage de 11941 à 11950 sur 16261


  • Communication dans un congrès

Mesure des paramètres ultrasonores du béton. Etude expérimentale des incertitudes stochastiques

M. Goueygou, P. Safinowski, Bogdan Piwakowski, J.P. Balayssac

Diagnobéton 2007, 2007, France. pp.1-4. ⟨hal-00284477⟩

  • Article dans une revue

Wireless propagation in tunnels

D.G. Dudley, M. Lienard, S.F. Mahmoud, Pierre Degauque

IEEE Antennas and Wireless Propagation Letters, 2007, 49, pp.11-26. ⟨10.1109/MAP.2007.376637⟩. ⟨hal-00283954⟩

  • Communication dans un congrès

(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs

E. Lefebvre, M. Borg, M. Malmkvist, J. Grahn, L. Desplanque, X. Wallart, Yannick Roelens, Gilles Dambrine, A. Cappy, S. Bollaert

19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.125-128, ⟨10.1109/ICIPRM.2007.381139⟩. ⟨hal-00284023⟩

  • Communication dans un congrès

Improving channel estimation in power line communications by using linear interpolation revitalized

Patrick Corlay, David Buèche, François-Xavier Coudoux, Marc G. Gazalet, Marc Slachciak

The power line channel can be considered, from a physical point of view, as a multipath channel due to the numerous reflections created by the impedance mismatches. The channel is stationary piecewise with sudden variations. Pilot symbol assisted modulation (PSAM), combined with interpolation…

IEEE International Symposium on Power Line Communications and Its Applications, ISPLC'07, Mar 2007, Pisa, Italy. pp.471-475, ⟨10.1109/ISPLC.2007.371170⟩. ⟨hal-00284413⟩

  • Communication dans un congrès

AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

S. Boulay, S. Touati, A. Sar, Virginie Hoel, Christophe Gaquière, Jean-Claude de Jaeger, S. Joblot, Y. Cordier, F. Semond, J. Massies

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.96-99, ⟨10.1109/EMICC.2007.4412656⟩. ⟨hal-00284403⟩

  • Communication dans un congrès

AlGaN/GaN HEMT device characterisation using an active loadpull large signal network analizer

Christophe Gaquière, M. Werquin, D. Ducatteau, E. Morvan, Jean-Claude de Jaeger

11th International Symposium on Microwave and Optical Technology, ISMOT-2007, 2007, Italy. pp.491-494. ⟨hal-00284406⟩

  • Communication dans un congrès

A 2GHz 0.25µm SiGe BiCMOS oscillator with flip-chip mounted BAW resonator

S. Razafimandimby, A. Cathelin, J. Lajoinie, D. Belot, A. Kaiser

IEEE International Solid-State Circuits Conference, ISSCC 2007, 2007, United States. pp.580-581, ⟨10.1109/ISSCC.2007.373553⟩. ⟨hal-00284382⟩

  • Communication dans un congrès

Tree-phonon bound states in antiferromagnet

V.L. Preobrazhensky, V.V. Rudenko, Philippe Pernod, V.I. Ozhogin

International Conference on Functional Materials, ICFM 2007, 2007, Ukraine. pp.257. ⟨hal-00284129⟩

  • Communication dans un congrès

Equatorial Kerr effect in TbCo2/FeCo nanostructure

A. Klimov, Philippe Pernod, Vladimir Preobrazhensky, Nicolas Tiercelin

International Conference on Functional Materials, ICFM 2007, 2007, Crimea, Ukraine. pp.300. ⟨hal-00284134⟩