Publications

Affichage de 15131 à 15140 sur 16261


  • Communication dans un congrès

Ultrasonic studies of macro-molecular network formation and changes in physical state in media

Georges Nassar, Bertrand Nongaillard

Proceedings of 2001 Ultrasonics International, 2001, Delft, Netherlands. ⟨hal-00152946⟩

  • Communication dans un congrès

Coupled line modelization of lossy adjacent interconnects with a full wave tangential vector finite element method

Jean-François Legier, Erick Paleczny, Gregory Servel, Denis Deschacht, Fabrice Huret, P. Kennis

2001, pp.46-48. ⟨hal-00152494⟩

  • Communication dans un congrès

Reliability of self-assembling 3D microstructures : snap-through modeling and experimental validation

O. Millet, L. Buchaillot, E. Quevy, D. Collard

2001, pp.391-401. ⟨hal-00152471⟩

  • Communication dans un congrès

Conception, optimisation et fabrication d'un photodétecteur adapté aux télécommunications optiques pour report hybride faible coût sur plate-forme silicium

Joseph Harari, V. Magnin, L. Giraudet, Didier Decoster

Actes de TELECOM 2001 & 2èmes Journées Franco-Maghrebines des Microondes et leurs Applications, JFMMA 2001, 2001, Casablanca, Maroc. ⟨hal-00152504⟩

  • Article dans une revue

Formation and characterisation of c-BN thin films deposited by microwave PECVD

A. Soltani, P. Thevenin, A. Bath

Diamond and Related Materials, 2001, 10, pp.1369-1374. ⟨hal-00152598⟩

  • Communication dans un congrès

A 60 GHz high power composite channel GaInAs/InP HEMT on InP substrate with Lg=0.15 µm

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger

We have improved power performance by studying three different GaInAs/InP composite channel structures. Also, different gate to drain extension devices have been processed. By using composite channel devices, we benefit from the better ionization threshold energy of InP compared to GaInAs (1.69 eV…

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM, May 2001, Nara, Japan. pp.196-199, ⟨10.1109/ICIPRM.2001.929091⟩. ⟨hal-00152622⟩

  • Article dans une revue

Parameter extraction and geometry effects on the electronic properties of submicron MOS transistors

H. Bakhtiar, A. Soltani, A. Hoffmann, J.P. Charles

Jurnal Fizik UTM, 2001, 8, pp.1-22. ⟨hal-00152635⟩

  • Communication dans un congrès

Méthodologie de modélisation boîte noire générique pour fonctions non linéaires radar

F. Graux, F. Dhont, J.M. Coupat, C. Tolant, P. Eudeline, B. Bonte, Y. Crosnier

Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152658⟩

  • Communication dans un congrès

Cross-sectional surface structure of III-V heterostructures by scanning tunneling microscopy

B. Grandidier

Nanoparticles in Materials Science, Franco-American Workshop, 2001, Chicago, United States. ⟨hal-00152582⟩

  • Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

Electronics Letters, 2001, 37, pp.1095-1096. ⟨hal-00152620⟩