Publications

Affichage de 7121 à 7130 sur 16434


  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Communication dans un congrès

Développement de matériaux hybrides par voie sol-gel limitant l'endommagement laser

F. Compoint, C. Ambard, H. Piombini, P. Belleville, K. Valle, Carmen Navarro Sanchez, P. Ruello, Marc Duquennoy

Journées SOL-GEL 2014, 2014, Tours, France. ⟨hal-00996834⟩

  • Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

  • Communication dans un congrès

UWB System Based on the M-OAM Modulation in IEEE.802.15.3a Channel

Khadija Hamidoun, Raja Elassali, Yassin El Hillali, Khalid Elbaamrani, Atika Rivenq, F. Elbahhar

Known for many years but unexploited in the field of communications, ultra wideband systems (UWB) can be a solution to the saturation of the frequency bands. The advantage of such systems is that they are inexpensive in energy because of the limitations imposed by the standard. Our work is to…

5th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2014, Costa de Caparica, Portugal. pp.507-514, ⟨10.1007/978-3-642-54734-8_56⟩. ⟨hal-01274817⟩

  • Article dans une revue

Ultrawide-bandwidth single-channel 0.4-THz wireless link combining broadband quasi-optic photomixer and coherent detection

Guillaume Ducournau, P. Szriftgiser, Alexandre Beck, Denis Bacquet, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Tahsin Akalin, Jean-Francois Lampin

Free space communications with huge data capacity have become a key point for the development of mobile access, services, and network technologies convergence. Wireless links using emerging terahertz technologies, also referred to as T-ray communications, have become an intensive research field…

IEEE Transactions on Terahertz Science and Technology, 2014, 4, pp.328-337. ⟨10.1109/TTHZ.2014.2309006⟩. ⟨hal-00987955⟩

  • Communication dans un congrès

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

Ali Soltani, Abdelkrim Talbi, J-C Gerbedoen, Jean-Claude de Jaeger, Philippe Pernod, V. Mortet, A. Bassam

In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth…

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. pp.2047-2050, ⟨10.1109/ULTSYM.2014.0510⟩. ⟨hal-03276910⟩

  • Communication dans un congrès

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩