Publications

Affichage de 7201 à 7210 sur 16434


  • Article dans une revue

Carbohydrate-lectin interaction on graphene-coated surface plasmon resonance (SPR) interfaces

Abra Penezic, Geetanjali Deokar, Dominique Vignaud, Emmanuelle Pichonat, Henri Happy, Palaniappan Subramanian, Blaženka Gasparovic, Rabah Boukherroub, Sabine Szunerits

The paper describes the detection of carbohydrate- lectin interaction on graphene-on-metal surface plasmon resonance (SPR) interfaces. Graphene-coated gold-based SPR interfaces were formed through the transfer of large-area graphene grown by chemical vapor deposition (CVD) on polycrystalline Cu…

Plasmonics, 2014, 9, pp.677-683. ⟨10.1007/s11468-014-9686-3⟩. ⟨hal-00994787⟩

  • Proceedings/Recueil des communications

Lavoisier and Sadi Carnot. Chemical–and–Physical Sciences as Dating Back to Two Survived Scientific Revolutions: 1789 And 1824

Raffaele Pisano, Rémi Franckowiak

Proceedings of the 9th International Organizing Science Technology Education – IOSTE symposium for Central and Eastern Europe - University of Hradec Králové, Gaudeamus Králové, pp.42-54, 2014, 978-80-7435-416-8. ⟨hal-04512994⟩

  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

  • Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

  • Article dans une revue

Focusing capability of a phononic crystal based on a hollow metallic structure

Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Lionel Haumesser, Andrew N. Norris

The dispersion curves of a phononic crystal (PC) based on a hollow metallic structure are presented. They exhibit a negative refraction dispersion branch and perfect refractive index matching with the surrounding water, leading to focusing capability. Numerical and experimental results are reported…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2014, 61, pp.1314-1321. ⟨10.1109/TUFFC.2014.3038⟩. ⟨hal-01056961⟩

  • Communication dans un congrès

Improved wet chemical transfer process to obtain clean high quality graphene

Geetanjali Deokar, Jean-Louis Codron, Emmanuelle Pichonat, Xavier Wallart, Henri Happy, Dominique Vignaud

Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization requires a clean and reproducible graphene transfer on non-conducting substrates,…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961392⟩

  • Communication dans un congrès

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Bandar Alshehri, S.-M. Lee, J.-H. Kang, Karim Dogheche, S.-H. Gong, S.-W. Ryu, E. Dumont, Y.-H. Cho, El Hadj Dogheche

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961412⟩

  • Communication dans un congrès

Enhanced efficiency by the effect of strain on the structure of a solar cell

Abdelkader Aissat, Rachid Bestam, M. El Bey, Jean-Pierre Vilcot

This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher…

International Conference on Technologies and Materials for Renewable Energy, Environment and Sustainability, TMREES14, 2014, Beirut, Lebanon. pp.817-823, ⟨10.1016/j.egypro.2014.06.100⟩. ⟨hal-01055040⟩

  • Communication dans un congrès

Conductance switching by light and electric field in new azobenzene derivatives-gold nano-particle self-assembled networks (NPSAN)

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume, Dora Demeter, Philippe Blanchard, Jean Roncali

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055037⟩