Publications

Affichage de 7721 à 7730 sur 16279


  • Communication dans un congrès

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

Stéphanie Rennesson, M. Chmielowska, S. Chenot, Yvon Cordier, François Lecourt, N. Defrance, Marie Lesecq, Virginie Hoel, Etienne Okada, Jean-Claude de Jaeger

10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States. ⟨hal-00987956⟩

  • Communication dans un congrès

Silicon nanotweezers with a microfluidic cavity for the real time characterization of DNA damage under therapeutic radiation beams

G. Perret, P.T. Chiang, T. Lacornerie, M. Kumemura, N. Lafitte, Hervé Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2013, 2013, Osaka, Japan. paper SuA07.2, 6820-6820. ⟨hal-00909944⟩

  • Article dans une revue

Theoretical approach to the feasibility of power-line communication in aircrafts

Virginie Degardin, I. Junqua, M. Lienard, Pierre Degauque, S. Bertuol

IEEE Transactions on Vehicular Technology, 2013, 62, pp.1362-1366. ⟨10.1109/TVT.2012.2228245⟩. ⟨hal-00812342⟩

  • Communication dans un congrès

Theoretical insights in weakly interacting epitaxial systems

I. Lefebvre, J.J. Wang

Workshop on Functional Oxides for Integration in Micro- and Nano-Electronics, 2013, Autrans, France. ⟨hal-00811811⟩

  • Communication dans un congrès

Giant piezoresistance in silicon nanowires

A.C.H. Rowe, J.S. Milne, S. Arscott

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, 2013, San Francisco, CA, United States. ⟨hal-00811788⟩

  • Communication dans un congrès

Ultrahigh sensitive terahertz detection by asymmetric dual-grating gate HEMT structure

Y. Kurita, Guillaume Ducournau, K. Kobayashi, Y. Meziani, V. Popov, Wojciech Knap, T. Otsuji

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811840⟩