Publications

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen…

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Article dans une revue

Planar InAs/AlSb HEMTs with ion-implanted isolation

G. Moschetti, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

IEEE Electron Device Letters, 2012, 33, pp.510-512. ⟨10.1109/LED.2012.2185480⟩. ⟨hal-00787019⟩

• Article dans une revue

Plasmonic nanoparticles array for high-sensitivity sensing : a theoretical investigation

O. Saison Francioso, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Sabine Szunerits, Rabah Boukherroub

Journal of Physical Chemistry C, 2012, 116, pp.17819-17827. ⟨10.1021/jp305310v⟩. ⟨hal-00787842⟩

• Article dans une revue

Size-dependence of the exciton transitions in colloidal CdTe quantum dots

Esther Groeneveld, Christophe Delerue, Guy Allan, Yann-Michel Niquet, Celso de Mello Donega

In this paper, we present a detailed investigation of the size dependence of the optical transitions of colloidal CdTe QDs ranging in diameter from 2.9 to 14.8 nm. The energy integrated absorption cross section per CdTe unit is investigated in detail for the lowest two exciton transitions (1S3/2(h…

Journal of Physical Chemistry C, 2012, 116, pp.23160-23167. ⟨10.1021/jp3080942⟩. ⟨hal-00787845⟩

• Article dans une revue

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

J. Zeleny, C. Dehos, P. Rosson, A. Kaiser

IET Science Measurement and Technology, 2012, 6, pp.168-175. ⟨10.1049/iet-smt.2011.0016⟩. ⟨hal-00787384⟩

• Article dans une revue

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

F Medjdoub, Yoann Tagro, Malek Zegaoui, B. Grimbert, Francois Danneville, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency…

IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩. ⟨hal-00786956⟩

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

K. Pantzas, G. Patriarche, David Troadec, S. Gautier, T. Moudakir, S. Suresh, L. Largeau, O. Mauguin, P. L. Voss, A. Ougazzaden

Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how…

Nanotechnology, 2012, 23, pp.455707-455716. ⟨10.1088/0957-4484/23/45/455707⟩. ⟨hal-00747027⟩

• Article dans une revue

Effect of heterostructure design on current-voltage characteristics in AlxGa1-xN/GaN double-barriers resonant tunneling diode

Mohamed Boucherit, Ali Soltani, Michel Rousseau, J.L. Farvacque, Jean-Claude de Jaeger

Ballistic transport in double-barriers resonant tunneling diodes based on GaN is investigated in this work using the non-equilibrium Green's functions formalism. The electron density of states, the electrons concentration, and the current-voltage characteristics are calculated taking into…

Journal of Applied Physics, 2012, 112 (11), pp.114305. ⟨10.1063/1.4767382⟩. ⟨hal-00787875⟩